Gallium source automatic supply and recovery device

Abstract

The invention discloses a gallium source automatic supply and recovery device. The gallium source automatic supply and recovery device comprising a gallium boat, a communicating vessel, a control valve, an additional gallium boat, a heater, a liquid level controller, a control system and an engine is designed. By using a working principle of the communicating vessel, automatic supply and recovery for controlling a gallium source are designed, thereby solving the problems that in the process of growing a nitride semiconductor material by an HVPE (Hydride Vapor Phase Epitaxy) technology, because a metal gallium source is continuously consumed, and the liquid level of the gallium source is continuously lowered, under the same process condition, the concentration of generated gallium chloride is reduced, the uniformity and stability of supply of source materials in a growth system of a nitride material are seriously influenced, then during HVPE epitaxial growth, the crystal growth rate is reduced, the process repeatability of crystal film thickness is relatively poor, and a residual gallium source in the gallium boat is difficult to recover and repeatedly use during HVPE machine maintenance. The device disclosed by the invention is reasonable and compact in structure and simple and convenient in operation, can better ensure timely supply of the gallium source, improve stability and reliability of an HVPE reaction system and prolong the service life of HVPE equipment, and meanwhile, the device can also utilize the communicating vessel to recover unused metal gallium sources to increase the utilization ratio of the gallium source, so that the device has a promising practical value.

Description

technical field

[0001] The invention relates to the technical field of semiconductor materials and equipment, in particular to an automatic gallium source replenishment and recovery device for growing nitride semiconductor materials by hydride vapor phase epitaxy (HVPE) technology. Background technique

[0002] Group III nitride semiconductor thin film materials, especially gallium nitride (GaN) with wide bandgap and direct bandgap, as a typical representative of the third-generation semiconductor materials, have high thermal conductivity, high electron mobility, high breakdown voltage and radiation resistance And other excellent properties, it has great application prospects in the manufacture of high-frequency, high-temperature, high-power optoelectronic devices. At present, the main preparation methods of GaN single crystal are: molecular beam epitaxy (MBE) method, high pressure solution method, metal organic chemical vapor deposition (MOCVD) method, hydride vapor phase e...

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