A gallium source automatic replenishment and recovery device

Abstract

The invention discloses a gallium source automatic replenishment and recovery device, and designs an automatic gallium source replenishment and recovery device for a gallium-containing boat, a communication device, a control valve, an additional gallium boat, a heater, a liquid level controller, a control system, and an engine. Recovery unit. Using the working principle of the connector, design and control the automatic replenishment and recovery of the gallium source to solve the problem of the continuous consumption of the metal gallium source and the continuous decrease of the liquid level of the gallium source in the process of growing nitride semiconductor materials by HVPE technology, resulting in the same process conditions The concentration of the generated gallium chloride decreases, which seriously affects the uniform stability of the source material supply in the growth system of the nitride material, resulting in a decrease in the crystal growth rate and poor process repeatability of the crystal film thickness in the HVPE epitaxial growth, and HVPE Issues such as recovery and reuse of the remaining gallium source left in the gallium boat during machine maintenance. The device of the invention has a reasonable and compact structure and is easy to operate, which can better ensure the timely supply of the gallium source, improve the stability and reliability of the HVPE reaction system, increase the service life of the HVPE equipment, and can also use the connector to recycle the unused gallium. The metal gallium source improves the utilization rate of the gallium source and has great practical value.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and equipment, in particular to a gallium source automatic replenishment and recovery device for growing nitride semiconductor materials by hydride vapor phase epitaxy (HVPE) technology. Background technique [0002] Group III nitride semiconductor thin film materials, especially gallium nitride (GaN) with wide bandgap and direct bandgap, as a typical representative of the third-generation semiconductor materials, have high thermal conductivity, high electron mobility, high breakdown voltage and radiation resistance And other excellent properties, it has great application prospects in the manufacture of high-frequency, high-temperature, high-power optoelectronic devices. At present, the main preparation methods of GaN single crystal are: molecular beam epitaxy (MBE) method, high pressure solution method, metal organic chemical vapor deposition (MOCVD) method, hydride vapor phase ep...

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problems raised in the background technology and the deficiencies of the prior art, the present invention proposes a gallium source automatic replenishment and recovery device, and designs a gallium-containing boat, a communicating The gallium source automatic replenishment and recovery device composed of a device, a control valve, an additional gallium boat, a heater, a liquid level controller, a control system and an engine can solve the gallium source liquid level caused by the continuous consumption of the gallium source and the inability to replenish it in time to the greatest extent. The decline affects the crystal growth rate and quality, and the recovery and reuse of the remaining gallium source in the gallium boat during HVPE machine maintenance

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