Method of forming semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems that the electrical properties of semiconductor devices need to be improved, and achieve the effect of alleviating the instability effect of negative bias voltage, avoiding photoresist poisoning, and good flatness

Active Publication Date: 2016-10-05
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0006] However, the electrical performance of semiconductor dev

Method used

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  • Method of forming semiconductor device
  • Method of forming semiconductor device
  • Method of forming semiconductor device

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Embodiment Construction

[0034] It can be seen from the background art that the electrical performance of semiconductor devices formed in the prior art needs to be improved.

[0035] In one embodiment, when the semiconductor device includes a core device and peripheral devices, in order to meet the different requirements of the core device and peripheral devices on the thickness of the gate dielectric layer, the process steps of forming the semiconductor device include: step S1, providing a core device region and The base of the peripheral device area, forming an oxide layer on the surface of the base; step S2, forming a photoresist layer on the surface of the oxide layer in the peripheral device area; step S3, using the photoresist layer as a mask, etching Removing the oxide layer located in the core device area; then removing the photoresist layer; step S4, forming a gate dielectric film on the surface of the oxide layer in the peripheral device area and the base surface of the core device area, and ...

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Abstract

A method for forming a semiconductor device, comprising: providing a substrate including a first region and a second region; forming an oxide film covering the surface of the substrate and a oxynitride film covering the surface of the oxide film; Nitrogen ion diffusion weakening chemical treatment is performed on the surface of the oxide film; after the nitrogen ion diffusion weakening chemical treatment is performed, a photoresist layer is formed on the surface of the nitrogen oxide film in the first region; using the photoresist layer as a mask, Etching and removing the oxynitride film and the oxide film in the second region; removing the photoresist layer; forming a gate dielectric film on the surface of the oxynitride film in the first region and the substrate surface in the second region; A gate conductive film is formed on the surface. The invention avoids the problem of photoresist poisoning while avoiding the negative bias instability effect, meets the different requirements of the core device and peripheral devices on the thickness of the gate dielectric layer, and improves the electrical performance and yield of the formed semiconductor device.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] Semiconductor devices can be mainly divided into core (Core) devices and peripheral (I / O) devices (or called input / output devices) according to functional distinctions. According to the electrical type of semiconductor devices, core devices can be divided into core NMOS devices and core PMOS devices, and input / output devices can be divided into input / output NMOS devices and input / output PMOS devices. [0003] Usually, the operating voltage of the input / output device is much higher than that of the core device. In order to prevent problems such as electrical breakdown, when the operating voltage of the device is higher, the thickness of the gate dielectric layer of the device is required to be thicker, so , the thickness of the gate dielectric layer of the input / output device is...

Claims

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Application Information

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IPC IPC(8): H01L21/8238
Inventor 刘焕新杨志勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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