Tunneling Field Effect Transistor and Method of Forming the Same

Abstract

The invention provides a tunneling field effect transistor which comprises a substrate with the formation of a fin with an epitaxial, first and second grids formed on opposite side walls of the fin, a first gate dielectric layer which is formed between the first grid and the side wall of the fin and the bottom surface of the first grid, a second gate dielectric layer which is formed between the second grid and the side wall of the fin and the bottom surface of the second grid, and source and drain regions which are formed at one side of the first grid and one side of the second grid. According to the tunneling field effect transistor with the structure, through controlling the width of the fin, a narrow tunneling junction without the limitation of impurity injection diffusion is realized, the tunneling current is increased, and the conduction current is further raised through increasing an effective tunneling area.

Description

technical field [0001] The present invention relates to the field of semiconductor devices, in particular to a tunneling field effect transistor and a method for forming the same. Background technique [0002] With the continuous reduction of device size, the number of devices per unit area of ​​the chip is increasing, and how to reduce power consumption has become an increasingly prominent problem. [0003] The structure of a conventional tunneling field effect transistor (conventional-TFET) mainly includes a substrate (channel), a gate dielectric layer, a gate, and source / drain regions on both sides of the gate. It mainly works based on the quantum tunneling effect. Taking the P-type tunneling field effect transistor as an example, when a negative voltage is applied to the gate, the potential of the channel region increases, and quantum tunneling occurs from the source region to the channel region. Drain area outflow. [0004] For conventional tunneling field effect tran...

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Problems solved by technology

However, in order to reduce the sub-threshold swing and increase the conduction current, the tunneling junction needs to be as narrow as possible. However, the tunneling field effect transistor with the existing structure will always cause the diffusion distribution of impurities during the injection and heat treatment process, and it is difficult to achieve a narrow tunneling junction. tunneling junction

[0005] In addition, in conventional tunneling field effect transistors, the source and drain regions are highly doped, and the doping will inevitably introduce defects, and the leakage current associated with these defects will destroy the reduction of the subthreshold swing.

Moreover, conventional tunneling field effect transistors have bipolar characteristics that can be turned on at both positive and negative gate voltages, making it difficult to completely turn off the device

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