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Preparation method for vanadium dioxide nano-particle film

A vanadium dioxide nano-particle film technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the uneven grain size inside the film, weaken the phase transition performance of the film, and lose the functional characteristics of the film and other problems, to achieve the effect of short heat treatment time, high crystallinity and low cost

Active Publication Date: 2016-10-26
AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method also has some limitations
First of all, the thermal oxidation method needs to be carried out in a vacuum furnace, the equipment is expensive, and a diffusion pump needs to be maintained to ensure a high vacuum; secondly, the method also needs to accurately control the ratio of inert gas and oxygen, so that the prepared di The vanadium oxide film maintains a precise stoichiometric ratio; finally, at this low heat treatment temperature, the grain size inside the film is not uniform, and there are many intragranular defects, which greatly weaken the phase transition properties of the film
At the same time, regardless of the traditional reactive magnetron sputtering method or the thermal oxidation method described above, due to the easy oxidation characteristics of the vanadium oxide film, rapid oxidation will occur if the heat treatment temperature is higher than 500 ° C, and over-oxidized carbon dioxide pentoxide will be generated. vanadium thin film, thereby depriving the film of functional properties

Method used

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  • Preparation method for vanadium dioxide nano-particle film
  • Preparation method for vanadium dioxide nano-particle film
  • Preparation method for vanadium dioxide nano-particle film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Using a metal vanadium target as a sputtering source, a 500nm thick metal vanadium film was sputtered on a clean substrate under argon gas, and the substrate temperature was kept at 200°C;

[0023] 2) Raise the temperature of the tube annealing furnace with one end open, keep it warm when it reaches 500°C, feed nitrogen gas from the non-open end of the furnace tube, and keep the nitrogen flow rate at 2L / min;

[0024] 3) Put the prepared metal vanadium film into a quartz crucible, and then push the crucible into the above-mentioned tubular annealing furnace for annealing. The annealing time is 10 minutes, and then pull out the crucible for rapid air cooling.

[0025] figure 1 It is the XRD pattern of the vanadium dioxide nanoparticle film prepared in Example 1, it can be seen that the film only contains a single vanadium dioxide phase, and no other impurity phases are formed. figure 2 It is the SEM image of the vanadium dioxide nanoparticle film prepared in Example ...

Embodiment 2

[0027] 1) Using a metal vanadium target as a sputtering source, a 200nm thick metal vanadium film was sputtered on a clean substrate under argon gas, and the substrate temperature was kept at 200°C;

[0028] 2) Raise the temperature of the tube annealing furnace with one end open, keep it warm at 570°C, and feed nitrogen gas from the non-open end of the furnace tube, and keep the nitrogen flow rate at 2L / min;

[0029] 3) Put the prepared metal vanadium film into a quartz crucible, and then push the crucible into the above-mentioned tubular annealing furnace for annealing. The annealing time is 5 minutes, and then pull out the crucible for rapid air cooling.

[0030] image 3 It is the XRD pattern of the vanadium dioxide nanoparticle film prepared in Example 2, it can be seen that the film only contains a single vanadium dioxide phase, and no other impurity phases are formed. Figure 4 It is the SEM image of the vanadium dioxide nanoparticle film prepared in Example 2. It can...

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Abstract

The invention relates to the field of intelligent film material, in particular to a preparation method for a vanadium dioxide nano-particle film. According to the preparation method, a metal vanadium film is prepared through the magnetron sputtering method, then is placed into an open tube furnace with nitrogen gas for undergoing high temperature annealing treatment and is fast taken out and cooled after heat preservation for a certain period of time. According to the preparation method, complex vacuum heat treatment equipment is not needed, and the required vanadium dioxide film can be obtained through the simple oxidation reaction. The process and the technology are simple and controllable, grains of the prepared film are uniform in size and small, and the phase transition property is obvious. A new technology low in cost, short in cycle and capable of being applied industrially is provided for the vanadium dioxide film material.

Description

technical field [0001] The invention relates to the field of intelligent thin film materials, in particular to a method for preparing a vanadium dioxide nanoparticle film. Background technique [0002] Vanadium dioxide is a kind of smart thin film material, which can undergo rapid metal-insulator phase transition under the control of parameters such as temperature, current or magnetic field. With the occurrence of phase transition, the crystal structure of the material changes, and many properties such as resistivity, magnetic susceptibility, transmittance, and reflectance all undergo sudden changes. This feature makes vanadium dioxide thin film a smart material with broad application prospects, and has great application potential in the fields of infrared detection, lithium battery electrodes, laser protection, and smart windows. [0003] At present, researchers have used a variety of methods to synthesize vanadium dioxide thin film materials, among which reactive magnetro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/34C23C14/58
CPCC23C14/14C23C14/34C23C14/5806C23C14/5846
Inventor 田野罗飞刘大博祁洪飞滕乐金
Owner AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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