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Ethanol gas sensor based on ZnO/SnO2 heterostructure composite material and preparation method thereof

A gas sensor and composite material technology, applied in the direction of electrochemical variables of materials, tin oxide, etc., can solve the problems of low sensitivity and high detection limit, and achieve the effect of improving sensitivity, broad application prospects and suitable for mass production.

Active Publication Date: 2016-10-26
JILIN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

In recent years, many studies have shown that the construction of ZnO / SnO 2 The heterogeneous structure can improve the problems of single semiconductor oxide sensor, such as low sensitivity and high detection limit.

Method used

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  • Ethanol gas sensor based on ZnO/SnO2 heterostructure composite material and preparation method thereof
  • Ethanol gas sensor based on ZnO/SnO2 heterostructure composite material and preparation method thereof
  • Ethanol gas sensor based on ZnO/SnO2 heterostructure composite material and preparation method thereof

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Embodiment 1

[0039] with hollow spherical SnO 2 / CeO 2 Heterostructure composite oxide semiconductor materials are used to make ethanol gas sensors, and the specific manufacturing process is as follows:

[0040] 1. First mix ethanol and deionized water at a ratio of 10:1 to form a 33mL solution, and then add 0.2g of SnCl to it 2 2H 2 O and 0.5mL hydrochloric acid with a mass fraction of 38%, sonicate for 20min at 30°C;

[0041] 2. Transfer the above solution to a reaction kettle with a volume of 40mL, react at 200°C for 24 hours, and after cooling to room temperature, wash the formed precipitate with deionized water and ethanol several times, and then dry it at room temperature before putting it in Calcined at 400 °C for 2 hours, thus obtained the SnO 2 Hollow spherical SnO assembled from nanoparticles 2 ; The diameter of the hollow sphere is between 200 and 400nm, and the thickness of the spherical shell is between 100 and 150nm.

[0042] 3. Take 30mg of the above hollow spherical S...

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Abstract

The invention belongs to the technical field of semiconductor oxide gas sensors, and specifically relates to an ethanol gas sensor based on a ZnO / SnO2 heterostructure composite material and a preparation method thereof. The provided ethanol gas sensor has the advantages of high sensitivity and low detection limit. A ZnO / SnO2 sensitive composite material, which is prepared by a two step hydrothermal method, is used; and the gas sensitivity on ethanol of the sensor is improved by using the heterostructure formed between SnO2 and ZnO and the synergetic catalytic effect on ethanol of SnO2 and ZnO. Moreover, in a low concentration range, the composite material has a good responding performance on ethanol gas, and even ethanol gas in the ppb level can be detected. The preparation technology of the sensor is simple, the volume of the sensor is small, and the sensor can be massively produced and has a wide application prospect in the field of ethanol content detection.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, in particular to a sensor based on ZnO / SnO 2 Ethanol gas sensor with high sensitivity and low detection limit based on heterostructure composite material and its preparation method. Background technique [0002] In recent years, the aggravation of atmospheric environment and micro-environmental pollution, frequent occurrence of industrial / family safety accidents, deterioration of food / drug quality, and urgent needs in the fields of medical care, welfare, resources, aerospace and military, etc., have provided great opportunities for the development of gas sensors. Broader space and opportunities. In order to meet the above requirements, the main performance of gas sensors must be greatly improved, including indicators such as sensitivity, selectivity, response recovery characteristics, lower detection limit, reliability, and power consumption. Among all kinds of gas senso...

Claims

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Application Information

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IPC IPC(8): G01N27/26C01G19/02
CPCC01G19/02C01P2002/72C01P2004/03C01P2004/34C01P2004/62C01P2004/88G01N27/26
Inventor 卢革宇刘江洋孙鹏孙彦峰马健揣晓红
Owner JILIN UNIV
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