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Terahertz polarization beam-splitting silicon grating for 1thz band

A polarization beam splitting and terahertz technology, applied in the field of terahertz polarization beam splitting silicon grating, achieves high extinction ratio, convenient material acquisition and simple structure

Active Publication Date: 2019-01-15
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But as far as we know, so far, no one has given the design parameters of a transflective grating polarization beam splitter fabricated on a silicon substrate for the 1Tz band

Method used

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  • Terahertz polarization beam-splitting silicon grating for 1thz band
  • Terahertz polarization beam-splitting silicon grating for 1thz band
  • Terahertz polarization beam-splitting silicon grating for 1thz band

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Embodiment Construction

[0016] Such as figure 1 The schematic diagram of the cross-section of the silicon grating for terahertz polarization beam splitting is shown. Areas 1 and 3 are air layers with a refractive index of 1.0. Area 2 is a silicon grating terahertz polarization beam splitter with a refractive index of 3.42. figure 2 The top view of the terahertz polarization beam-splitting silicon grating shown is a rectangular grating. 4 represents the incident terahertz wave, 5 represents the transmitted TM terahertz wave, and 6 represents the reflected TE terahertz wave (transverse electric wave). The terahertz wave 4 is vertically incident on the surface of the rectangular grating, the vibration direction of the TE polarized wave (transverse magnetic wave) corresponding to the electric field vector is perpendicular to the incident surface, and the vibration direction of the TM polarized wave corresponding to the magnetic field vector is perpendicular to the incident surface.

[0017] in such as ...

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Abstract

The invention relates to a terahertz polarization beam splitting silicon grating for 1THz wave band. Hollowed rectangular silicon strips are periodically arrayed to form a silicon grating. The ratio of the silicon strip width to the periods is 0.27; the grating period ranges from 204.6-219.4 microns, and the silicon is47.6-51.4 microns thick. The silicon grating produces no high order diffraction to a vertical incident 1THz light wave, with only zero order transmission and reflection wave and the extinction ratio of the grating being greater than 100. The transflective polarization beam splitting silicon grating has following advantages: wide operation angle bandwidth, simple structure, low cost, high beam splitting efficiency, and high extinction ratio. It also has important practical values in terahertz imaging and spectroscopy measurement field. The silicon grating can be processed by femtosecond micro machining or micro optical technology, whose materials can conveniently taken at small costs and can be manufactured in batches, making it have important prospects for practical use.

Description

technical field [0001] The invention relates to a grating polarization beam splitter, in particular to a terahertz polarization beam splitting silicon grating for 1 THz band. Background technique [0002] Terahertz wave is an electromagnetic wave with a frequency range of 0.1-10 THz and a wavelength range of 0.03-3 mm, which is between microwave and infrared. Terahertz spectroscopy not only has a high signal-to-noise ratio, but can quickly analyze and identify subtle changes in sample composition. It is also a non-contact measurement technology that can quickly and accurately measure the physical information of semiconductors, dielectric thin films, and bulk materials. . Terahertz waves can carry a wealth of physical and chemical information, and their photon energy is on the order of millielectronvolts, which will not cause ionization damage to the objects they act on, and is safe. Therefore, terahertz waves have very important application prospects in communication, biom...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B27/28G02B27/42
CPCG02B27/283G02B27/4233
Inventor 冯吉军李安原李敏曾和平
Owner UNIV OF SHANGHAI FOR SCI & TECH