Periodically poled LNOI ridge-type waveguide and preparation method thereof

A ridge waveguide and periodic polarization technology, which is applied in nonlinear optics, instruments, optics, etc., can solve the problems that cannot meet the application scenarios, the difficulty of preparing PP-LNOI optical waveguides, the production process of PP-LNOI optical waveguides and the lack of functional devices. There are records and other problems to achieve the effect of reducing production difficulty, improving yield, and multiple nonlinear effects

Active Publication Date: 2016-11-09
南京鼎芯光电科技有限公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

However, there are few records about the manufacturing process and functional devices of the PP-LNOI optical waveguide.
The reason is that the p

Method used

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  • Periodically poled LNOI ridge-type waveguide and preparation method thereof
  • Periodically poled LNOI ridge-type waveguide and preparation method thereof
  • Periodically poled LNOI ridge-type waveguide and preparation method thereof

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] Such as figure 1 As shown, it is an LNOI wafer structure embedded with Au and semiconductor organic polymer double-layer film, including lithium niobate thin film layer 1, semiconductor organic polymer layer 2, gold electrode layer 3, silicon dioxide buffer layer 4, silicon or niobium Lithium Oxide Substrate5. This structure is used as the base material of the periodically poled LNOI ridge waveguide of the present invention.

[0027] Such as figure 2 Shown is the overall structure diagram of the periodically poled LNOI ridge waveguide of the present invention, including the periodically poled lithium niobate ridge waveguide 6, the semiconductor organic polymer layer 2, the lower gold electrode layer 3, and the silicon dioxide...

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Abstract

The invention discloses a periodically poled LNOI ridge-type waveguide. The overall structure of the periodically poled LNOI ridge-type waveguide comprises a silicon or lithium niobate substrate (5), a silicon dioxide buffer layer (4), a gold electrode layer (3), a semiconductor organic polymer layer (2) and a periodically poled lithium niobate ridge-type waveguide (6) from bottom to top from a substrate. Compared with the prior art, the periodically poled LNOI ridge-type waveguide has the advantages that the production difficulty is greatly reduced, and the rate of finished products is improved; the transmission loss of the waveguide is remarkably reduced; the integration of a multi-function optoelectronic device can be easier to achieve; the device can obtain a more nonlinear effect; sum frequency and difference frequency functions of the PP-LNOI waveguide are achieved; a foundation is laid for the further design and production of practical frequency conversion devices, practical development of LNOI platform based integrated optical circuits and devices is promoted, and a support is provided for research and development of the next generation of optoelectronic hybrid integrated chips.

Description

technical field [0001] The invention relates to the field of integrated optoelectronics, in particular to a periodically polarized LNOI ridge optical waveguide and a preparation method thereof. Background technique [0002] Microelectronics technology represented by VLSI has developed to a very high level. One of the directions to further improve the performance of integrated circuits is to introduce light with faster propagation speed and larger information capacity into integrated circuits to form optoelectronic integration. Enter the field of integrated optoelectronics. Outstanding representatives in this field are silicon-on-insulator (SOI) optical waveguides and devices. The core and cladding materials of the SOI waveguide have a large refractive index difference, so the cross-section of the waveguide is small and the bending loss is low, which is very suitable for the development of ultra-small integrated optical circuits and devices. And due to the advantages of rel...

Claims

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Application Information

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IPC IPC(8): G02F1/035
CPCG02F1/035
Inventor 华平壤陈朝夕
Owner 南京鼎芯光电科技有限公司
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