One time programmable device and programming realization method

A one-time, device technology, applied in the field of integrated circuit manufacturing, can solve the problems of complex circuit structure and increased power consumption, and achieve the effect of simple operation, low power consumption and easy realization

Inactive Publication Date: 2016-11-16
CETHIK GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The breakdown voltage of the barrier layer is higher than the ordinary programming voltage, and due to the on-resistance of the switch tube, the external voltage must be high enough to ensure the effective breakdown of the barrier layer of the MTJ. This traditional method often requires additional The high-voltage input structure not only complicates the design of the circuit structure, but also increases the power consumption of a programming

Method used

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  • One time programmable device and programming realization method
  • One time programmable device and programming realization method
  • One time programmable device and programming realization method

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Embodiment

[0019] Example: such as figure 1 As shown, a one-time programmable device is composed of a MOS switch tube, a magnetic tunnel junction, a word line, a bit line, a sense amplifier circuit, and a potential generating device. The magnetic tunnel junction includes a free layer, a barrier layer, and a reference layer; the barrier layer is sandwiched between the free layer and the reference layer, such as figure 2 shown. in, figure 1 Point A in the figure is the drain of the MOS switch; the free layer of the magnetic tunnel junction is connected to the drain of the MOS switch; the reference layer of the magnetic tunnel junction is connected to the bit line. The gate of the MOS switch tube is connected to the word line; the source of the MOS switch tube is connected to the potential generating device. The potential generated by the potential generating device is a fixed ground potential.

[0020] The two ends of the magnetic tunnel junction also include a top metal layer and a b...

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Abstract

The invention relates to a one time programmable device and a programming realization method. The one time programmable device comprises a switching MOS (Metal Oxide Semiconductor) tube, a magnetic tunneling junction and a constant potential. A traditional OTP (One Time Programmable) structure is optimized, the source electrode of a switching tube is directly grounded, and an effect that the voltage of two ends of the magnetic tunneling junction is increased so as to realize the one time punching of a barrier layer and one time programming under a situation of normal working voltage can be achieved. By use of the method, breakdown voltage required by a traditional circuit structure is lowered. Compared with a traditional OTP structure, the one time programmable device has the characteristics of being simple in structure, small in area occupation and convenient in design, production and operation, the power consumption of one time programming can be lowered, and manufacture cost is saved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a one-time programmable device and a programming realization method. Background technique [0002] OTP (one time programmable, one-time programmable device) is a common NVM (non-volatile memory). One-time programming is irreversible during the programming process and only allows writing once. STT-MRAM is a kind of non-volatile memory. Its storage structure adopts MTJ magnetic tunnel junction, the middle one is called barrier layer, and the upper and lower ones are free layer and reference layer. [0003] One-time programming for MTJ (Magnetic Tunnel Junction) usually uses high voltage to break down the barrier layer, and the barrier layer after breakdown shows low impedance (about 100 ohms). The breakdown voltage of the barrier layer is higher than the ordinary programming voltage, and due to the on-resistance of the switch tube, the external voltage must be high ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C17/14G11C17/18
CPCG11C11/1659G11C11/1673G11C17/146G11C17/18
Inventor 陆羽毛欣
Owner CETHIK GRP
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