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Quaternary AlGaInP light-emitting diode chip and manufacturing method thereof

A technology of light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of complicated manufacturing process, reduce interface reflectivity, etc., and achieve the effect of reducing gold consumption, reducing cost, and improving external quantum efficiency.

Inactive Publication Date: 2016-11-16
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problems of LEDs with this structure: the p-side ohmic contact layer usually uses AuBe or AuZn alloy, the n-side ohmic contact electrode uses AuGe or AuGeNi alloy, and the p-side bonding wire electrode usually uses Au electrodes with a thickness of ≥2um
This structure only improves the external quantum efficiency by reducing the reflectivity of the interface, and does not effectively use the conductive properties of ITO to form an ohmic contact with the GaP window layer, which complicates the manufacturing process.

Method used

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  • Quaternary AlGaInP light-emitting diode chip and manufacturing method thereof
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  • Quaternary AlGaInP light-emitting diode chip and manufacturing method thereof

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Embodiment 1

[0030] Such as figure 2 As shown, it is a semiconductor light-emitting diode structure implemented according to the present invention. The device is composed of the following parts from top to bottom: p-side bonding wire electrode (1), p-type ohmic contact layer (11), surface C element heavy Doped GaP layer (10), window layer (2), p-type confinement layer (3), active layer (4), n-type confinement layer (5), distributed Bragg reflector DBR (6), buffer layer (7 ), GaAs substrate (8), n-type ohmic contact electrode (9).

[0031] a) providing a GaAs substrate;

[0032] b) A buffer layer, a distributed DBR layer, an n-type confinement layer, an active layer, a p-type confinement layer, a GaP window layer, and a surface C-doped GaP layer are sequentially formed on the substrate, and the C doping concentration of the surface layer is higher than 1x10 19 cm -3 ;

[0033] c) Evaporate a layer of transparent conductive film ITO with an electron beam, and the thickness of the ITO ...

Embodiment 2

[0040] Such as image 3 As shown, it is a semiconductor light-emitting diode structure implemented according to the present invention. The device is composed of the following parts from top to bottom: p-side bonding wire electrode (1), p-side ohmic contact layer (11), surface roughening layer (12), surface C element heavily doped GaP layer (10), window layer (2), p-type confinement layer (3), active layer (4), n-type confinement layer (5), distributed Bragg reflector DBR (6), buffer layer (7), GaAs substrate (8), n-type ohmic contact electrode (9).

[0041] a) providing a GaAs substrate;

[0042] b) A buffer layer, a distributed DBR layer, an n-type confinement layer, an active layer, a p-type confinement layer, a GaP window layer, and a surface C-doped GaP layer are sequentially formed on the substrate, and the C doping concentration of the surface layer is higher than 1x10 19 cm -3 ;

[0043] c) Surface roughening is carried out on the surface C element heavily doped G...

Embodiment 3

[0051] Such as Figure 4 As shown, it is a semiconductor light-emitting diode structure implemented according to the present invention. The device is composed of the following parts from top to bottom: p-side bonding wire electrode (1), p-side ohmic contact layer (11), surface roughening layer (12), surface C element heavily doped GaP layer (10), window layer (2), p-type confinement layer (3), active layer (4), n-type confinement layer (5), distributed Bragg reflector DBR (6), buffer layer (7), GaAs substrate (8), n-type ohmic contact electrode (9).

[0052] a) providing a GaAs substrate;

[0053] b) A buffer layer, a distributed DBR layer, an n-type confinement layer, an active layer, a p-type confinement layer, a GaP window layer, and a surface C-doped GaP layer are sequentially formed on the substrate, and the C doping concentration of the surface layer is higher than 1x10 19 cm -3 ;

[0054] c) roughening the surface on the GaP surface heavily doped layer; the roughe...

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Abstract

The invention provides a quaternary AlGaInP light-emitting diode chip and a manufacturing method thereof. The quaternary AlGaInP light-emitting diode chip is characterized in that the overall chip manufacture procedure is completely or mostly free of gold. The method is suitable for quaternary light-emitting diodes with various wavelengths, and belongs to the technical field of photoelectron manufacturing. A high-transmittance conductive film ITO instead of Au / AuBe / Au is adopted by a p surface of the quaternary light-emitting diode chip employing the manufacturing method and a good ohmic contact is formed by the p surface and a GaP window layer with a C-element heavily doped layer on the surface layer; and meanwhile, the thickness of the ITO film is strictly controlled, so that the interface reflectivity is reduced to the minimum to form an anti-reflection effect while good current expansion is achieved; the external quantum efficiency is greatly improved; and the bare core brightness of the chip is improved by 10%-20%. A pure Al or gold-coated electrode employing a metal Al as a primary element is adopted as a p-surface welding wire electrode; and meanwhile, a non-gold material containing a metal Ge instead of Au / AuGe / Au is adopted by an N surface of the chip. By the manufacturing method of the quaternary diode, the gold consumption of the chip manufacture procedure is reduced by at least 90%; and the cost can be effectively reduced greatly.

Description

technical field [0001] The invention relates to a light-emitting diode chip and a manufacturing method thereof, belonging to the technical field of optoelectronic manufacturing. Background technique [0002] As a new lighting technology, LED uses semiconductor chips as light-emitting materials to directly convert electrical energy into light energy. Semiconductor LEDs and their applications are considered to be one of the most promising high-tech fields in the 21st century due to their advantages such as high luminous efficiency, low power consumption, long service life, strong safety and reliability, environmental protection and sanitation. In recent years, my country's LED industry has developed rapidly. Driven by the support of national policies and the demand for downstream applications, a relatively complete LED industry chain has been formed. my country's LED industry is mainly concentrated in the Yangtze River Delta, Pearl River Delta, and Fujian Delta. The current pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/40H01L33/00
Inventor 肖志国薛蕾刘丽武胜利
Owner DALIAN MEIMING EPITAXIAL WAFER TECH