Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic tunnel junction based on ferromagnetic insulator

A magnetic tunnel junction and insulator technology, applied in the field of non-volatile memory, can solve problems such as large lattice mismatch, interfacial dislocation and potential barrier defects

Active Publication Date: 2016-11-16
BEIHANG UNIV
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single crystal MgO(001) barrier layer has a large lattice mismatch with commonly used ferromagnetic metal layers such as iron Fe, cobalt iron CoFe, etc., which will cause interface dislocations and barrier defects, which limit the further improvement of the TMR value. improve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic tunnel junction based on ferromagnetic insulator
  • Magnetic tunnel junction based on ferromagnetic insulator
  • Magnetic tunnel junction based on ferromagnetic insulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1: as figure 1 , is a structural schematic diagram of a novel MTJ (magnetic tunnel junction) based on a ferromagnetic insulating material as a barrier layer;

[0035]Compared with the traditional MTJ based on the barrier layer of non-magnetic insulator (such as MgO, Al2O3, etc.), the novel MTJ of the present invention uses ferromagnetic insulator as the tunneling barrier layer. The new MTJ core layer structure is composed of ferromagnetic layer I (0-3nm), ferromagnetic insulating layer (0-5nm), and ferromagnetic layer II (0-3nm) from top to bottom; the magnetization direction of each layer can be Parallel to the plane, or all along the vertical direction. The magnetization direction of one layer (reference layer) of the ferromagnetic layer I and ferromagnetic layer II is fixed, and the magnetization direction of the other layer (free layer) can be reversed in a certain way, so that the two layers can be parallel or antiparallel of the two states. Methods t...

Embodiment 2

[0037] Embodiment 2 is a novel MTJ (magnetic tunnel junction) based on a ferromagnetic insulating material as a barrier layer and a non-magnetic spacer layer; the structure consists of a ferromagnetic metal layer 1 (0-3nm) from top to bottom, Nonmagnetic spacer layer (0-3nm), ferromagnetic insulating layer (0-5nm), nonmagnetic spacer layer (0-3nm), ferromagnetic metal layer II (0-3nm) ( Figure 2a ); wherein the ferromagnetic metal layer I, the ferromagnetic metal layer II and the ferromagnetic insulating layer are the same as in Embodiment 1, and a nonmagnetic spacer layer is added between the ferromagnetic metal layer I, the ferromagnetic metal layer II and the ferromagnetic insulating layer , separate them to avoid coupling between two ferromagnetic metal layers in some material systems through a ferromagnetic insulating layer, so that their magnetization directions cannot be separated, and it is impossible to distinguish between parallel and antiparallel magnetization direc...

Embodiment 3

[0039] Embodiment 3 is a novel MTJ (Magnetic Tunnel Junction) based on a ferromagnetic insulating material and adding a heavy metal layer according to the present invention. The structure consists of a ferromagnetic metal layer (0-3nm), a ferromagnetic insulating layer (0-5nm), and a heavy metal layer (0-5nm) from top to bottom ( Figure 3a ); Another structure based on this is to add a non-magnetic spacer layer between the ferromagnetic metal layer and the ferromagnetic insulating layer ( Figure 3b ), to separate them to avoid the coupling effect of the two magnetic layers in some material systems, so that the magnetization directions cannot be separated.

[0040] In this example, the material of the ferromagnetic layer is Co, which is used as a reference layer; the ferromagnetic insulator is YIG, which is used as a barrier layer and also serves as a free layer for inversion; the heavy metal layer is Pt.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a magnetic tunnel junction based on a ferromagnetic insulator. The concrete structure of the magnetic tunnel junction comprises a ferromagnetic metal layer, a ferromagnetic insulating layer and a ferromagnetic metal layer; the ferromagnetic metal layer is prepared from one of ferromagnetic metal materials such as Fe, Co and Ni, or one of ferromagnetic metal alloy materials such as CoFe, CoFeB and NiFe, or one of semi-metal or semi-metal alloy materials with high spin polarization such as LaSrMnO3, Fe3O4 and Co2FeAlSi; and the materials of the ferromagnetic insulating layer include but not limited to one of Y3Fe5O12 and BaFe12O19 with relatively high Curie temperature. According to the magnetic tunnel junction, compared with an existing research point, namely a magnetic tunnel junction taking a non-magnetic insulator including MgO and the like as a barrier layer, due to the fact that the ferromagnetic insulator has ferromagnetism and insulation as well as a spin filtering effect which has already been proved in some ferromagnetic insulating materials, the magnetic tunnel junction has relatively high performances such as a relatively high TMR value.

Description

technical field [0001] The invention relates to a magnetic tunnel junction based on a ferromagnetic insulator, and belongs to the technical field of nonvolatile memory. Background technique [0002] Magnetic tunneling junction (MTJ for short) has important applications in magnetic memory (Magnetic Random Access Memory, MRAM for short), hard disk read head, microwave oscillator, magnetic sensor, etc. Its core is sandwiched by two ferromagnetic layers. A "sandwich" structure composed of an insulating layer, that is, "ferromagnetic metal layer / non-magnetic insulating layer / ferromagnetic metal layer". The magnetization direction of one of the ferromagnetic layers is fixed, called the reference layer or fixed layer; the magnetization direction of the other ferromagnetic layer can be changed to be parallel to the reference layer (Parallel, referred to as P) or antiparallel (Antiparallel). -Parallel, referred to as AP), called the free layer. When the magnetization directions of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L43/08H01L43/10
CPCH10N50/10H10N50/85
Inventor 赵巍胜刘攀闫韶华
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com