Preparation method of thin graphene conductive film

A technology of graphene film and conductive film, which is applied in the direction of cable/conductor manufacturing, circuit, electrical components, etc., can solve the problems of unsatisfactory performance requirements, unreasonable recycling, and less indium resources, and achieve good economic and social benefits , Low production cost, clean and pollution-free surface

Inactive Publication Date: 2016-11-23
CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also some disadvantages in the use of indium tin oxide conductive films, including: (1) Indium resources are scarce, resulting in continuous price increases, making ITO an increasingly expensive material, such as spraying, pulsed laser deposition, electroplating, etc.
Moreover, indium oxide has certain toxicity, and unreasonable recycling can easily cause environmental pollution
(2) The brittle nature of ITO makes it unable to meet the performance requirements of some new applications (such as bendable flexible displays, touch screens, organic solar cells), and is not suitable for the production of next-generation flexible electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A preparation method for graphene conductive film, comprising the following steps:

[0024] A. Deposit nickel thin film layer

[0025] Deposit a nickel thin film layer on a glass substrate; the method for depositing a nickel thin film layer is a magnetron sputtering method, and the vacuum degree of the background: 5 × 10 -5 Pa, the substrate temperature is 50°C.

[0026] B. Depositing graphene film layers

[0027] Adopt CVD method to deposit graphene film layer, the thickness of described graphene film layer is 50 μ m;

[0028] C. Post-processing

[0029] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned with dilute nitric acid, the surface nickel film layer is removed, and then dried to obtain the graphene conductive film.

Embodiment 2

[0031] A preparation method for graphene conductive film, comprising the following steps:

[0032] A. Deposit nickel thin film layer

[0033] Deposit a nickel thin film layer on a glass substrate; the method for depositing a nickel thin film layer is magnetron sputtering, and the vacuum degree of the background: 2×10 -4 Pa, the substrate temperature is 80°C.

[0034] B. Depositing graphene film layers

[0035] Adopt CVD method to deposit graphene film layer, the thickness of described graphene film layer is 90 μ m;

[0036] C. Post-processing

[0037] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned with dilute nitric acid, the surface nickel film layer is removed, and then dried to obtain the graphene conductive film.

Embodiment 3

[0039] A preparation method for graphene conductive film, comprising the following steps:

[0040] A. Deposit nickel thin film layer

[0041] Deposit a nickel thin film layer on a glass substrate; the method for depositing a nickel thin film layer is a magnetron sputtering method, and the vacuum degree of the background: 1.5×10 -4 Pa, the substrate temperature is 60°C.

[0042] B. Depositing graphene film layers

[0043] Adopt CVD method to deposit graphene film layer, the thickness of described graphene film layer is 60 μm;

[0044] C. Post-processing

[0045] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned with dilute nitric acid, the surface nickel film layer is removed, and then dried to obtain the graphene conductive film.

[0046] In this embodiment, in step A, the sputtering pressure is 2Pa.

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Abstract

The invention discloses a preparation method of a graphene conductive film, which belongs to the technical field of conductive film production. The method includes the following steps A. Depositing a nickel thin film layer: depositing a nickel thin film layer on a glass substrate; B. Depositing a graphene film layer: depositing a graphene film layer by CVD method, the thickness of the graphene film layer is 50-90 μm; C. Cleaning and drying: cool down the semi-finished product obtained in step B, and after the temperature drops to room temperature, clean the graphene film layer with dilute nitric acid, remove the nickel film layer on the surface, and then dry it. The invention has the advantages of low production cost and high efficiency.

Description

technical field [0001] The invention relates to a preparation method of a graphene conductive film, belonging to the technical field of conductive film production. Background technique [0002] With the development of science and technology, society's demand for new materials is also increasing. Materials are the material basis for the progress of human civilization and the development of science and technology. The renewal of materials has brought about great changes in people's lives. At present, the vigorous development of new transparent and conductive thin film materials has been widely used in liquid crystal displays, touch screens, smart windows, solar cells, microelectronics, information sensors and even military industries, and is penetrating into other technological fields. Since thin film technology is closely related to various technologies, scientists in various fields are interested in thin film preparation and its properties. [0003] Conductive film is a fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B1/04
CPCH01B13/00H01B1/04
Inventor 何娟
Owner CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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