Memory device, manufacturing method thereof, and electronic equipment including the same

Abstract

Disclosed are a storage device, a manufacturing method thereof, and electronic equipment including the storage device. The storage device may include: a plurality of first columnar active regions and a plurality of second columnar active regions extending upward on the substrate, arranged in first and second arrays respectively, and each first columnar active region includes a source / Drain layers and channel layers are alternately stacked, the corresponding channel layers in each first columnar active region are on substantially the same plane, and the corresponding source / drain layers are on substantially the same plane, and each second The columnar active region includes an integrally extended active semiconductor layer; a columnar conductive contact part located at the lower part of each second columnar active region; an insulating layer formed around the periphery of each columnar conductive contact part; Multi-layer first storage gate stacks in substantially the same plane and respectively surrounding the periphery of each channel layer on the corresponding plane; multi-layer second storage gate stacks surrounding the periphery of each second columnar active region.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel mat...

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Problems solved by technology

[0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials

On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

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