Unlock instant, AI-driven research and patent intelligence for your innovation.

A semiconductor device and an electronic apparatus

A technology of electronic devices and semiconductors, which is applied in the direction of semiconductor devices, electric solid devices, circuits, etc., can solve the problem of low opening speed and achieve the effects of fast triggering and excellent ESD protection performance

Active Publication Date: 2016-11-23
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The turn-on behavior is directly dependent on the voltage between the base and emitter of the parasitic NPN transistor and the PNP transistor of the DTSCR device. The turn-on behavior is induced by the trigger current flowing into the base of the parasitic NPN transistor and the PNP transistor. The existing DTSCR device triggers The current only flows into one base of the two parasitic transistors, that is, the base of the parasitic PNP transistor, so the turn-on speed is very low
[0005] It can be seen that the existing diode-assisted trigger SCR device has the problem of low turn-on speed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A semiconductor device and an electronic apparatus
  • A semiconductor device and an electronic apparatus
  • A semiconductor device and an electronic apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Below, refer to Figure 2A with Figure 2B A semiconductor device according to an embodiment of the present invention will be specifically described. in, Figure 2A shows a schematic cross-sectional view of a semiconductor device in a specific embodiment of the present invention; Figure 2B shows the corresponding Figure 2A Equivalent circuit diagram of a semiconductor device in .

[0040] Such as Figure 2AAs shown, the semiconductor device of the embodiment of the present invention includes a P-type semiconductor substrate 20, and the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. The semiconductor substrate 20 is doped with P-type dopant ions to form a P-type semiconductor substrate 20 .

[0041] It also includes a first N well 211, a second N...

Embodiment 2

[0055] The present invention also provides an electronic device, which includes the semiconductor device described in Embodiment 1 and an electronic component connected to the semiconductor device.

[0056] The electronic device also has the above-mentioned advantages due to the better ESD protection performance of the included semiconductor device.

[0057] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phone motherboard with the integrated circuit, etc.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor device and an electronic apparatus, and relates to the field of semiconductor technology. A P-type semiconductor substrate is comprised; a first N-well is located within the P-type semiconductor substrate; a second N-well is positioned within the P-type semiconductor substrate and spaced from the first N-well; a P-well is located within the semiconductor substrate, adjacent to and in contact with the second N-well and spaced from the first N-well; a first N+ injection region and a first P+ injection region are spaced from each other in the first N-well; a second P+ injection region and a second N+ injection region are spaced from each other in the second N-well; a third P+ injection region, a fourth P+ injection region and a third N+ injection region are positioned in the P-well at intervals, wherein the second P+ injection region is an anode of the semiconductor device; the fourth P+ injection region and the third N+ injection region are cathodes; the first N+ injection region is connected to the third P+ injection region; and the first P+ injection region and the second N+ injection region are connected. The semiconductor device can realize excellent ESD protection performance and rapid trigger of an SCR device.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and an electronic device. Background technique [0002] In the field of semiconductor technology, the electrostatic discharge (ESD) phenomenon is a major threat to integrated circuits (ICs). With the continuous reduction of semiconductor process technology dimensions, ESD protection design becomes more and more challenging and difficult in nanoscale CMOS technology. [0003] SCR (silicon controlled rectifier) ​​devices are widely used in on-chip electrostatic discharge (ESD) protection of ICs due to their strong ESD robustness and the strongest current discharge capability per unit area. The high trigger voltage of SCR devices limits its application range when it is used as low operating power source ICs. Therefore some advanced technologies such as diode-assisted trigger SCR devices (DTSCR) are proposed to enhance the turn-on efficiency of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L27/02
CPCH01L27/0248H01L29/7412
Inventor 钟雷李宏伟罗婵季林燕程惠娟
Owner SEMICON MFG INT (SHANGHAI) CORP