Rare-earth doped crystalline silicon, preparation method thereof and solar cell

Abstract

The invention provides rare-earth doped crystalline silicon. The rare-earth doped crystalline silicon is characterized in that the crystalline silicon is an N-type crystal silicon or a P-type crystal silicon; the rare earth element is one or more from erbium, thorium, cerium, ytterbium and thulium; and the doping amount of the rare earth element is from 0.01 ppba to 1000 ppba. As a certain amount of the rare earth element is doped in the P type or N type crystal silicon, the spectrum absorption limit of the crystalline silicon can be increased efficiently; the wavelength of the absorption spectrum of the crystalline silicon is increased from about 400-1100 nm to more than 1100 nm, so that the absorption rate of the sunlight is increased, and the photoelectric conversion efficiency of a solar cell is accordingly increased. The experiment result shows that the photoelectric conversion efficiency of the solar cell made of the rare-earth doped crystalline silicon disclosed by the invention is increased by 0.1%. The invention also provides a preparation method of the rare-earth doped crystalline silicon and a solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cell manufacturing, and in particular relates to rare earth-doped crystalline silicon, a preparation method thereof and a solar cell. Background technique [0002] Solar cells are divided into crystalline silicon solar cells and amorphous silicon solar cells. Due to the advantages of crystalline silicon solar cells with longer service life and simpler material preparation process than amorphous silicon thin film cells, crystalline silicon solar cells have gradually become solar cells. the mainstream of the market. [0003] The production of crystalline silicon solar cells is mainly based on crystalline silicon wafer materials, and its working principle is to use crystalline silicon wafer materials to absorb light energy and undergo photoelectric conversion reactions to generate electrical energy. Therefore, improving the photoelectric conversion efficiency of crystalline silicon wafers is an import...

AI Technical Summary

Problems solved by technology

[0004] In the existing silicon wafer technology, it is mainly to form a P-type semiconductor by doping trivalent elements such as boron and gallium in the crystalline silicon wafer, or to form an N-type semiconductor by doping pentavalent elements such as phosphorus in the crystalline silicon wafer, so as to improve The photoelectric conversion efficiency of crystalline silicon wafers, but the theoretical efficiency of solar cells made of crystalline silicon wafers in the above two technical solutions is only 28%, and the actual efficiency is only about 23%. It is very difficult to further improve the efficiency. At present, it is urgent to develop a Crystalline silicon wafers with higher conversion efficiency