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Controllable Subwavelength Maskless Lithography System and Method Based on Random Scattering Media

A random scattering medium and maskless lithography technology, which is applied in the field of lithography, can solve the problems of limited application range, cost increase, and cost increase, and achieve the effects of increasing the field of view, reducing lithography costs, and improving time efficiency

Active Publication Date: 2017-10-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the maskless optical lithography technology based on spatial light modulators, various lithography methods still have various defects that limit their application range. The zone plate with short wavelength and large numerical aperture is more difficult to manufacture, and the cost also increases accordingly. At the same time, it relies on resolution enhancement technology to break through the diffraction limit; shrinking projection lithography technology can generate images with a resolution of several microns, and further The improvement of resolution is affected by the reduction of objective lens system, exposure depth, and grid effect. As the wavelength decreases, the cost increases sharply

Method used

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  • Controllable Subwavelength Maskless Lithography System and Method Based on Random Scattering Media
  • Controllable Subwavelength Maskless Lithography System and Method Based on Random Scattering Media
  • Controllable Subwavelength Maskless Lithography System and Method Based on Random Scattering Media

Examples

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Embodiment 1

[0032] A controllable sub-wavelength maskless lithography system based on random scattering media. The light emitted by the light source 1 passes through the beam expander 2 and then irradiates on the spatial light modulator (SLM) Ⅰ3. The focused pattern is passed through the narrowing objective lens 12 The substrate 13 on the exposure table 14 is exposed to complete the photolithography exposure process, see figure 1 , the present invention adds a random scattering medium assembly and a feedback control subsystem between the reduction objective lens 12 and the spatial light modulator (SLM) I3; the random scattering medium assembly of the present invention is connected in series with 4-fI subsystems along the optical path direction 4. Random scattering medium 5, 4-fII subsystem 6; the feedback control subsystem of the present invention is connected in series after the 4-fII6 subsystem, and the feedback control subsystem is sequentially provided with a spatial light modulator (S...

Embodiment 2

[0035] The overall composition of the controllable sub-wavelength maskless lithography system based on random scattering medium is the same as that in Embodiment 1, and the 4-fI sub-system 4 of the present invention can use two lenses, wherein the front is a lens with a large focal length, and the rear is a system with a small focal length , can also be combined with a reduction objective lens and a lens, no matter which scheme can achieve beam reduction. 4-fII sub-system 6 can use two lenses, the front is a small focal length lens, and the back is a large focal length system, or a combination of a microscope objective lens and a lens can be used, no matter which scheme can achieve beam expansion. The focal lengths of all the lenses are selected according to the size of the two spatial light modulators and the required resolution.

Embodiment 3

[0037] The overall composition of the controllable sub-wavelength maskless lithography system based on random scattering medium is the same as that in Embodiment 1-2. The random scattering medium 5 either uses a strong scattering material or a high refractive index material whose surface is polished into a rough surface; according to this System imaging principle, the field of view of the entire lithography system is FOV≈λd / πL, and the axial variation range of the system is Δz FOV ≈2·FOV·d / D, the range in which the target changes axially, and changes within this range will not affect the subsequent imaging process. Where λ is the wavelength of the light source, d is the distance between the target and the random scattering medium, and L is the thickness of the random scattering medium, so a thin medium should be used. The random scattering medium used in this example is frosted glass (GROUND GLASS 100MM DIA TS, 62620EDMUND) with a particle size of 220. The present invention a...

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Abstract

The invention proposes a random scattering medium based controllable sub-wavelength maskless photoetching system and method, which is used for solving the technical problem of high cost, low time efficiency and low resolution of a photoetching technology. A spatial light modulator I is used for generating a target pattern, a light wave passes through the spatial light modulator I and then is incident to a surface of a random scattering medium, the random scattering medium is used for random coding of light, a spatial light modulator II is used for compensating phase distortion generated by the random scattering medium, and finally, sub-wavelength imaging through the scattering medium is achieved, an arbitrary controllable sub-wavelength digital mask is formed for projection exposure. By the system and the method, the fabrication of a mask is avoided, and the photoetching cost is greatly reduced; with the combination of random coding of the random scattering medium and phase compensation of the spatial light modulation, the photoetching resolution is improved; and only one time of phase calibration process is required, the photoetching time efficiency is improved, and thus, the maskless photoetching of a controllable sub-wavelength pattern is achieved.

Description

technical field [0001] The present invention relates to the technical field of lithography, especially optically-based programmable control maskless lithography, specifically a programmable control sub-wavelength maskless lithography system and method based on random scattering media, which is applied to various lithography field. Background technique [0002] Photolithography technology refers to the process technology that uses the principle of photochemical reaction and chemical and physical etching methods in the manufacture of integrated circuits to transfer graphics to substrates coated with light-sensitive media to form target graphics. Such substrates include circuit boards, flat panel displays, various chips, and the like. The substrate used for photolithography is usually a semiconductor wafer or a glass substrate coated with a photosensitive medium. [0003] In the photolithography process, the surface of the semiconductor wafer or glass substrate is exposed thr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/2051
Inventor 刘杰涛冯蕾龚昌妹李慧娟朱大炜郭成飞邵晓鹏
Owner XIDIAN UNIV
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