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Method for processing metal pattern on semiconductor surface

A metal pattern and surface processing technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of not checking the metal pattern, etc., and achieve the effect of reducing processing costs, fewer process steps, and simple process

Inactive Publication Date: 2016-12-07
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no information has been found on patterning metals directly on semiconductor surfaces

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  • Method for processing metal pattern on semiconductor surface
  • Method for processing metal pattern on semiconductor surface

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specific Embodiment 1

[0037] Specific embodiment one: a method for processing metal patterns on the surface of a semiconductor according to this embodiment, the process is as follows figure 1 shown, including the following steps:

[0038] Step a, increasing the roughness in the set pattern area on the surface of the semiconductor material;

[0039] Step b, making metal deposition liquid;

[0040] Step c, placing the semiconductor material obtained in step a into the metal deposition solution, the area where the surface roughness of the semiconductor material changes will undergo a metal deposition reaction;

[0041] Step d, taking out the semiconductor material from the metal deposition solution for cleaning and drying.

specific Embodiment 2

[0042] Specific embodiment 2: A method of processing a metal pattern on a semiconductor surface in this embodiment, on the basis of specific embodiment 1, step a is further defined to include the following steps, such as figure 2 Shown:

[0043] Step a1, making an embossing template 1 identical to the set pattern;

[0044] Step a2, plating a noble metal layer 2 with a thickness of 0.1-1000 nm on the imprint template 1;

[0045]Step a3, mixing 1-50 parts of hydrofluoric acid with 1-50 parts of oxidizing agent and 100-1000 parts of solvent to configure mixed solution 3 of hydrofluoric acid and oxidizing agent, said oxidizing agent comprising H 2 o 2 、HNO 3 , Fe(NO 3 ) 3 , KMnO 4 , KBrO 3 、K 2 Cr 2 o 7 , O 2 and other common oxidants, and the solvents include common solvents such as water and ethanol;

[0046] Step a4, covering the imprint template 1 on the surface of the semiconductor material 4 in the mixed solution 3, the area where the surface of the semiconducto...

specific Embodiment 3

[0047] Specific embodiment three: a kind of method of processing metal patterns on the semiconductor surface of this embodiment, on the basis of specific embodiment one, further limit step a can also be realized by the following method: carry out mechanical scanning to the semiconductor material surface setting pattern area Scribing; direct laser writing on the set pattern area on the surface of the semiconductor material; direct electron beam writing on the set pattern area on the surface of the semiconductor material; first make a photoresist or other material complementary to the set pattern as a sacrificial layer, and then perform Plasma etching or chemical etching, finally removing the sacrificial layer.

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Abstract

The invention discloses a method for forming a metal pattern on a semiconductor surface, and belongs to the technical field of the semiconductor processing. The method for forming the metal pattern on the semiconductor surface comprises the specific steps as follows: step a: increasing the roughness in a pattern setting region on the surface of a semiconductor material; step b, manufacturing metal deposition liquid; step c, placing the semiconductor material obtained in the step a in the metal deposition liquid, performing the metal deposition reaction on the region with changed roughness on the surface of the semiconductor material; step d, taking out the semiconductor material from the metal deposition liquid, cleaning and drying. Through the adoption of the method disclosed by the invention, the metal pattern containing a metal alloy pattern and the multilayer metal pattern can be processed on the semiconductor surface under the condition of not using expensive instrument equipment, the large-area and multi-surface semiconductor material can be processed, the process is simple, the cost is low, the processed metal pattern is high in resolution, uniform in thickness and good in adhesive force with a semiconductor base.

Description

technical field [0001] The invention relates to a method for processing a metal pattern on a semiconductor surface, belonging to the technical field of semiconductor processing. Background technique [0002] High-resolution, low-cost processing technology is a major demand for the development of the semiconductor industry. A typical representative is the transfer of target patterns to semiconductor substrates, and the processing of metal patterns is one of the most challenging items. Metal patterns on semiconductor surfaces are widely used as integrated electrodes or inductive / magnetic induction elements in MEMS devices, optoelectronic devices, and magnetic effect devices. Metal patterns on semiconductor surfaces can also be used as catalysts to catalyze chemical reactions on semiconductor surfaces, such as metal-assisted chemical etching. Etching replaces traditional methods such as plasma etching to process microstructures on semiconductor surfaces. In addition, the meta...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02697H01L21/02019
Inventor 金鹏撖琳林杰
Owner HARBIN INST OF TECH
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