non-volatile memory

A non-volatile, memory technology, applied in semiconductor devices, electrical solid state devices, electrical components, etc., can solve the problems of lower reliability of memory elements, affect the electrical performance of storage cells, wear and tear the tunnel oxide layer, etc., and achieve reduction Effects of erasing voltage, increasing speed, and reducing operating voltage
CN106206588BActive Publication Date: 2019-08-06IOTMEMORY TECH INC +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
IOTMEMORY TECH INC
Publication Date
2019-08-06

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Abstract

The invention provides a non-volatile memory, which has a storage unit. The memory cell has a stacked structure, first and second floating gates, an erasure gate dielectric layer, an auxiliary gate dielectric layer, first and second doped regions, and first and second control gates. The stacked structure has a gate dielectric layer, an auxiliary gate, an insulation layer and an erasure gate arranged in sequence. The first and second floating gates are respectively disposed on sidewalls on both sides of the stacked structure. The erase gate dielectric layer is disposed between the erase gate and the first and second floating gates. The auxiliary gate dielectric layer is disposed between the auxiliary gate electrode and the first and second floating gate electrodes. The first and second doping regions are respectively disposed on both sides of the stack structure and the first and second floating gates. The first and second control gates are respectively disposed on the first and second floating gates. The present invention can operate at low operating voltage, thereby increasing the reliability of semiconductor components.
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Description

technical field

[0001] The invention relates to a semiconductor element, in particular to a nonvolatile memory. Background technique

[0002] Non-volatile memory has been widely used in personal computers and electronic devices due to its advantages that data can be stored, read, and erased multiple times, and the stored data will not disappear after power failure.

[0003] A typical non-volatile memory is designed to have a stacked gate (Stack-Gate) structure, which includes a tunnel oxide layer, a floating gate (Floating gate), and an inter-gate dielectric that are sequentially arranged on the substrate. layer and control gate (Control Gate). When programming or erasing the flash memory device, appropriate voltages are applied to the source region, the drain region, and the control gate, so that electrons are injected into the polysilicon floating gate, or electrons are removed from the polysilicon floating gate. Set the gate to pull out.

[0004] In the operation of no...

Claims

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