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Bonding material and bonding method using the same

A technology for joining materials and joining methods, applied in the direction of welding/cutting media/materials, nanotechnology for materials and surface science, welding media, etc., can solve the mechanical strength that cannot be used only to the extent that it cannot withstand pressure And other issues

Inactive Publication Date: 2016-12-14
DOWA ELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, there is also the problem that it cannot be used for raw materials that only have a mechanical strength that cannot withstand pressure.

Method used

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  • Bonding material and bonding method using the same
  • Bonding material and bonding method using the same
  • Bonding material and bonding method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0071]

[0072] In a 500 mL beaker, 13.4 g of silver nitrate (manufactured by Toyo Kagaku Co., Ltd. (Toyo Kagaku Co., Ltd.)) was dissolved in 72.1 g of pure water to prepare a silver solution.

[0073] Next, 1.34 L of pure water was added to a 5 L beaker, nitrogen gas was passed for 30 minutes, and the temperature was raised to 60° C. while removing dissolved oxygen. 17.9 g of sorbic acid (manufactured by Wako Pure Chemical Industries, Ltd. (Wako Pure Chemical Industries, Ltd.)) was added. Then, 2.82 g of 28% ammonia water (manufactured by Wako Pure Chemical Industries, Ltd.) was added to adjust the pH. In the following examples and comparative examples, the reaction starts with the addition of ammonia water. While stirring this, 5.96 g of aqueous hydrazine (purity 80% / manufactured by Otsuka Chemical Co., Ltd. (Otsuka Chemical Co., Ltd.)) was added 5 minutes after the start of the reaction.

[0074] Nine minutes after the start of the reaction, the silver solution was adde...

Embodiment 2

[0092] In Example 1, except that the main firing was set at 350° C. for 5 minutes, the bonded body and the fired film were formed in the same manner. The shear strength was 56.2 MPa, showing an extremely high value. In addition, the specific resistance of the fired film at this time was 2.4 μΩ·cm, and it had extremely high conductivity. Also, the SEM image of the obtained fired film is shown in Figure 4 . Although fired in nitrogen, interparticle sintering proceeded to such an extent that the shape of the particles could not be distinguished. This means that interparticle sintering is performed. Proportions etc. are shown in Table 1 or 2. In addition, test conditions are shown in Table 3. The crystallite diameter confirmed in the same manner as in Example 1 was 73.58 nm, and similarly from the results of photographs, it was found that crystal grains were growing.

Embodiment 1

[0094] In Example 1, except that 90.0 g of nanoparticles (coated with sorbic acid) of the metal component was changed to mixed spherical submicron silver particles (manufactured by DOWA Electronics Co., Ltd. / average particle diameter D50 value: 1.0 μm) 45.0 g and 45.0 g of sorbic acid-coated silver nanoparticles obtained by the method described in Example 1, in the same proportion, Example 1 was repeated. The total amount of metal components is 90.0 g, which is the same. Table 3 shows the evaluation results using the obtained bonding material.

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Abstract

A method of forming a bonded product using metal nanoparticles is provided. More specifically, provided is a paste containing a flux component that can form a metal phase even in an inert atmosphere. The use of this paste allows a bonding material that can give a practically acceptable bonding strength to be provided in an inert atmosphere such as a nitrogen atmosphere at low temperatures without performing conventionally used pressurization. The paste is a bonding material configured to include: silver nanoparticles having an average primary particle diameter of 1 to 200 nm and coated with an organic material having 8 or less carbon atoms; a flux component having at least two carboxyl groups; and a dispersion medium. The use of this bonding material allows materials to be bonded even at a temperature of 300 DEG C. or lower.

Description

technical field [0001] The present invention relates to a joining material and a joining method using the same. Background technique [0002] As electronic components used in automobiles and industrial equipment become larger in current, the operating temperature of semiconductors used in them tends to be higher. For this reason, a joining material capable of withstanding such a high-temperature environment is urgently required. Currently, lead-containing solders that maintain strength at high temperatures have been used, but since the current trend is to suppress the use of lead, it is urgently desired to provide a bonding method suitable for such conditions. [0003] As a candidate for a joining method that can meet such demands, a joining method using silver nanoparticles that does not use lead and can achieve joining at a lower temperature than bulk silver is attracting more and more attention. In such a technical trend, for example, a method of mixing silver oxide par...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F1/00B22F7/06B22F1/052B22F1/054B22F1/102
CPCB22F7/064B22F1/102B22F1/052B22F1/054B22F1/056B22F2999/00B22F2304/056B22F2304/054B22F2303/01B82Y30/00H05K3/3489H05K2203/086H05K3/32H01L2224/8384H01L2924/01005H01L2924/01006H01L2924/01023H01L2924/01024H01L2924/01033H01L2924/01047H01L2924/0105H01L2924/01074H01L2924/014H01L2924/0665H05K2201/0257H05K2203/1131H01L2924/13091H01L2924/01029H01L2924/13055H01L2224/29339H01L2224/2949H01L24/29H01L2224/83075H01L2924/20106H01L2924/20107H01L2924/20108H01L2924/20109H01L2924/2011H01L2924/20111H01L2224/83011H01L2924/1306H01L2924/1301H01L2924/13033H01L2924/1305C22C5/06H01L2924/15747B23K1/0016B23K1/20B23K1/203B23K35/3618H01L2924/203H01L2924/12042B23K35/36B22F2301/255H01L2224/83203B23K2101/42H01B1/02H01L24/83B23K35/025B23K35/3006H01L2224/83048H01L2224/2919H01L2924/00H01L2924/3512H01L2924/0002C09J11/06H01L24/11B22F9/24B23K1/0008H01L24/27H01L24/32H01L2224/29139H01L2224/32145H01L2224/32221H01L2224/83801
Inventor 远藤圭一久枝穣宫泽彰宏长原爱子上山俊彦
Owner DOWA ELECTRONICS MATERIALS CO LTD