Room temperature ferromagnetic semiconductor material MnSiP2 and preparation method and applications thereof

A semiconductor, room temperature technology, applied in the direction of inorganic material magnetism, inductance/transformer/magnet manufacturing, electrical components, etc., can solve the problem of low Curie temperature

Active Publication Date: 2016-12-21
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem that the Curie temperature of the existing magnetic semiconductor materials is relatively low and limits the practical application of the room temperature environment, and provides a novel room-temperature ferromagnetic semiconductor material MnSiP with a chalcopyrite structure 2 , and the preparation method and application of the material

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  • Room temperature ferromagnetic semiconductor material MnSiP2 and preparation method and applications thereof
  • Room temperature ferromagnetic semiconductor material MnSiP2 and preparation method and applications thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0015] According to the molar ratio of Mn:Si:P=1:1:2.0, three simple raw materials of Mn, Si and P were weighed respectively, and the raw materials were ground evenly in an agate mortar, put into a quartz tube, and vacuumed 3×10 -4 After Pa, seal and fire the quartz tube. Put the quartz tube into a high-temperature tube furnace, and use staged heating. First, raise the temperature to 450°C at a rate of 30°C / hour, keep the temperature at a constant temperature for 15 hours, continue to heat up to a reaction temperature of 950°C, and react at a constant temperature for 20 hours. Then, after 50 Hours slowly cooled to room temperature. Open the quartz tube, take out the well-crystallized block, clean it with deionized water, and place it in an oven for drying to obtain pure phase MnSiP 2 Magnetic semiconductor materials.

[0016] The MnSiP obtained through high temperature synthesis in this example 2 The powder X-ray diffraction pattern and temperature-varying magnetic suscepti...

Embodiment 2

[0018] According to the molar ratio of Mn:Si:P=1:1:2.3, weigh the three simple raw materials of Mn, Si and P respectively, grind the raw materials evenly in the agate mortar, put them into the quartz tube, and vacuumize 4×10 -4 After Pa, seal and fire the quartz tube. Put the quartz tube into a high-temperature tube furnace, and use a staged temperature rise. First, raise the temperature to 500°C at a rate of 40°C / hour, keep the temperature constant for 20 hours, continue to heat up to the reaction temperature of 1000°C, and react at a constant temperature for 25 hours. Then, after 80 Hours slowly cooled to room temperature. Open the quartz tube, take out the well-crystallized block, clean it with deionized water, and place it in an oven for drying to obtain pure phase MnSiP 2 Magnetic semiconductor materials.

Embodiment 3

[0020] According to the molar ratio of Mn:Si:P=1:1:2.5, three simple raw materials of Mn, Si and P were weighed respectively, and the raw materials were ground evenly in an agate mortar, put into a quartz tube, and vacuumed 5×10 -4 After Pa, seal and fire the quartz tube. Put the quartz tube into a high-temperature tube furnace, and adopt a staged temperature rise. First, raise the temperature to 480°C at a rate of 50°C / hour, keep the temperature for 18 hours, continue to heat up to the reaction temperature of 1050°C, and react at a constant temperature for 30 hours. Then, after 100 Hours slowly cooled to room temperature. Open the quartz tube, take out the well-crystallized block, clean it with deionized water, and place it in an oven for drying to obtain pure phase MnSiP 2 Magnetic semiconductor materials.

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Abstract

The invention provides a room temperature ferromagnetic semiconductor material MnSiP2 and a preparation method and applications thereof. The MnSiP2 magnetic semiconductor material belongs to the tetragonal system, I-42d space group, and cell parameters are: a=5.5823(3), b=3.4388(6) Angstrom, c=10.2297(13) Angstrom and z=4. The preparation method comprises following steps: (1) Mn, Si and P are grinded uniformly and placed in a quartz tube and then the tube is vacuumed and sealed and fired; (2) periodic heating is adopted on the quartz tube and then the quartz tube is slowly cooled to room temperature; (3) blocks having good crystallization is taken out, cleaned and dried to obtain the room temperature ferromagnetic semiconductor material MnSiP2. The MnSiP2 magnetic semiconductor material having the chalcopyrite structure is prepared for the first time in the invention, the Curie temperature of the material is 290K; the material can be applied to prepare spin field effect transistors, spin light emitting diodes, spin resonance magnetic tunnel junctions, optical isolators, magnetic sensors, or nonvolatile memory.

Description

technical field [0001] The invention relates to a room temperature ferromagnetic semiconductor material MnSiP 2 Preparation method and application thereof, belonging to the technical field of magnetic semiconductor materials Background technique [0002] Magnetic semiconductor materials have magnetic and semiconductor properties, and can process and store information by manipulating the two degrees of freedom of electron charge and electron spin in the semiconductor, realizing the organic integration of electronics, photonics and magnetism, and can be used to develop new The first-generation electronic devices, such as spin field effect transistors and spin light emitting diodes, have very broad application prospects in the field of optoelectronics, so as to meet the development trend of ultra-high speed, ultra-bandwidth, and ultra-large capacity of information technology. At present, magnetic semiconductor materials can be obtained by means of magnetic element doping or io...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01F41/02
CPCH01F1/40H01F41/02
Inventor 王善朋陶绪堂张翔于童童
Owner SHANDONG UNIV
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