Polycrystalline silicon ingot casting technology

A polycrystalline silicon ingot furnace and polycrystalline silicon technology are applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., which can solve the problems of difficulty in removing crucible gas, high oxygen content in ingot products, poor use effect, etc. The effect of grain size, low input cost and easy control

Inactive Publication Date: 2017-01-04
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the process of polysilicon ingot casting, there is no unified, standard and standardized method for reducing the grain size (that is, the method of processing fine-grained polysilicon ingot casting method) to follow. In actual processing, it is inevitable that the operation is relatively random and expensive. Long time, poor use effect and other problems
[0004] In addition, the heaters used in the existing polysilicon ingot furnaces generally have a five-sided heating structure, that is, heaters are installed on the top of the crucible and outside the four side walls. This five-sided heating method heats up from top to bottom. Radiation, melting efficiency is low, and at the same time, the gas at the bottom of the crucible is difficult to get rid of, so that the oxygen content at the bottom of the finished ingot is relatively high

Method used

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  • Polycrystalline silicon ingot casting technology
  • Polycrystalline silicon ingot casting technology
  • Polycrystalline silicon ingot casting technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0216] In this example, the difference from Example 1 is that in step 101, the organic binder, deionized water and boron nitride are uniformly mixed at a mass ratio of 1:2:0.8 to obtain a coating spray solution; the organic binder The agent is a silicone adhesive; when spraying in step 102, the inner bottom surface of the crucible 1 is 1m 2 The mass of boron nitride contained in the coating spray liquid sprayed in the area is 100g; when drying in step 103, the drying equipment is used to spray on the inner bottom surface of the crucible 1 at a temperature of 80°C The coating spray liquid is dried, and the crucible 1 is heated to 80° C. by the drying equipment, and then kept warm until the coating spray liquid sprayed on the inner bottom surface of the crucible 1 is dried; the steps The preheating time in the third step is 4h and T1=1285°C, P1=100kW; T2=1400°C in step 401, T3=1560°C in step 402, t=20min in step 403, P2=45kW; Q2=650mbar in step 4 ; In the first step, the holdin...

Embodiment 3

[0227] In this example, the difference from Example 1 is that in step 101, the organic binder, deionized water and boron nitride are uniformly mixed in a mass ratio of 1:2.5:0.8 to obtain a coating spray solution; the organic binder The agent is an epoxy adhesive; when spraying in step 102, the inner bottom surface of the crucible 1 is 1m 2 The mass of boron nitride contained in the coating spray liquid sprayed in the area is 130g; when drying in step 103, the drying equipment is used to spray on the inner bottom surface of the crucible 1 at a temperature of 100°C Dry the coating spray liquid, and first use the drying equipment to heat the crucible 1 to 100°C, and then keep it warm until the coating spray liquid sprayed on the inner bottom surface of the crucible 1 is dried; step The preheating time in the third step is 6h and T1=1125°C, P1=50kW; T2=1350°C in step 401, T3=1540°C in step 402, t=40min in step 403, P2=25kW; Q2=550mbar in step 4 ; In the first step, the holding t...

Embodiment 4

[0238] In this example, the difference from Example 1 is that in step 101, the organic binder, deionized water and boron nitride are uniformly mixed at a mass ratio of 1:2.5:1.2 to obtain a coating spray solution; the organic binder The agent is an instant adhesive; when spraying in step 102, the inner bottom surface of the crucible 1 is 1m 2 The mass of boron nitride contained in the coating spray liquid sprayed in the region is 180g.

[0239] In this embodiment, the remaining method steps and process parameters are the same as those in Embodiment 1.

[0240] In this embodiment, compared with the conventional crucible, after the polysilicon ingot casting furnace is used and the crucible 1 with the bottom coating 2 is used for polysilicon ingot casting, the surface of the processed ingot finished product has no impurities, no sticking crucible phenomenon, and the bottom of the ingot is The oxygen content is reduced by more than 72%, the minority carrier lifetime is more than ...

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Abstract

The invention discloses a polycrystalline silicon ingot casting technology. The technology comprises the following steps of 1 auxiliary heater installing, wherein an auxiliary heater is installed in a polycrystalline silicon ingot casting furnace and is a bottom heater arranged under a crucible; 2 charging; 3 preheating; 4 melting, wherein the process comprises the following steps of six-side heating melting, five-side heating melting and follow-up melting; 5 crystal growing pretreating after melting, wherein the process comprises the steps of temperature decreasing and temperature increasing; 6 crystal growing; 7 annealing and cooling, wherein after the crystal growing process in the step 6 is completed, annealing and cooling are conducted, and processed and formed polycrystalline silicon ingots are obtained. The technology is simple in step, reasonable in design, easy and convenient to achieve and good in using effect, heating is conducted by adopting a six-side heating device, and by adding the step of conducting crystal growing pretreating after melting and regulating a crystal growing process, the grain size can be effectively decreased, and the quality of the finished ingots is improved.

Description

technical field [0001] The invention belongs to the technical field of polysilicon ingot casting, and in particular relates to a polysilicon ingot casting process. Background technique [0002] Photovoltaic power generation is one of the most important clean energy sources with great development potential. The key factors restricting the development of photovoltaic industry are low photoelectric conversion efficiency on the one hand and high cost on the other hand. Photovoltaic silicon wafers are the basic material for the production of solar cells and components. The purity of polysilicon used to produce photovoltaic silicon wafers must be above 6N (that is, the total content of non-silicon impurities is below 1ppm), otherwise the performance of photovoltaic cells will be greatly negative influences. In recent years, the production technology of polycrystalline silicon wafers has made remarkable progress, and the polycrystalline ingot casting technology has progressed fro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06C30B33/02C03C17/00
Inventor 刘波波贺鹏虢虎平史燕凯
Owner XIAN HUAJING ELECTRONICS TECH
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