Manufacturing method for distributed feedback semiconductor laser with wavelength of 650nm
A distributed feedback and manufacturing method technology, applied in the field of optoelectronics, can solve the problems of single structure, restricted laser power and life, and background deterioration, and achieve the effect of high life.
Inactive Publication Date: 2017-01-18
北京青辰光电科技有限公司
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Problems solved by technology
[0004] At present, there are few studies on distributed feedback semiconductor lasers with InGaP / AlGaInP active regions with a light emitting wavelength of 650nm, and the structure is single. Due to the limitation of the energy band structure, the epitaxial materials must use Al-containing materials, which restricts the power and life of the laser.
In the general structure, the upper cladding adopts the Zn-doped scheme, so that Zn remains in the reaction chamber, which makes the background of the subsequent epitaxy worse. If the method of cleaning the reaction chamber is used, the continuous production will be affected.
At the same time, when etching the ridge of the laser, there are fewer material options. Even if dry etching is used, the depth of the ridge cannot be controlled absolutely uniformly, resulting in inhomogeneity in performance
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[0024] see Figure 1 ~ Figure 3 , the invention provides a kind of wavelength is the manufacture method of the distributed feedback semiconductor laser of 650nm, comprises the following steps:
[0025] (1) Obtain primary epitaxial material on N-GaAs substrate 1 by MOCVD epitaxy, including 200nm~400nm n-GaAs buffer layer 2 (doped with Si, n=1~3×10 18 cm -3 ), 1.2μm~1.3μm n-Al 0.51 In 0.49 P lower cladding layer 3 (doped with Si, n=1~2×10 18 cm -3 ), 60nm~80nm Al 0.35 Ga 0.17 In 0.48 P lower confinement layer 4, InGaP / AlInGaP multi-quantum well active region 5 (laser wavelength is 650nm), 60nm-80nm Al 0.35 Ga 0.17 In 0.48 P upper confinement layer 6, 100nm ~ 200nm p-Al 0.8 GaAs layer 7 (doped with C, p=1~2×10 18 cm -3 ), 60nm~90nm p-InGaAsP grating layer 8 (doped with Zn, p=1~2×10 18 cm -3 );
[0026] (2) make a grating at the p-InGaAsP grating layer 8 of the primary epitaxial material, and its Bragg wavelength is at 650 ± 2nm;
[0027] (3) Secondary epitaxial u...
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Abstract
The invention discloses a manufacturing method for a distributed feedback semiconductor laser with the wavelength of 650nm. The method comprises: (1), a primary epitaxial material is obtained on an N-GaAs substrate by using MOCVD epitaxial processing; (2), a grating is manufactured on a p-InGaAsP grating of the primary epitaxial material; (3), cladding layers and a contact layer are formed on a secondary epitaxial unit; and (4) a ridge waveguide laser process is carried out to realize device preparation. Because of utilization of a tensile strain InGaP / AlGaInP active region and a tensile strain InGaP etching stopping layer, the distributed feedback semiconductor laser that has the wavelength of 650nm and has advantages of long service life, low threshold value, and uniform performance is realized.
Description
technical field [0001] The invention belongs to the field of optoelectronics, relates to a manufacturing method of a single-mode feedback semiconductor laser, and provides a reference for GaAs-based InGaP / AlGaInP active region lasers. Background technique [0002] Human economic and social activities will inevitably emit a large amount of fine particulate matter (PM 2.5), which has led to large-scale smog in northern China in recent years, especially in winter. These air particles include dozens of kinds of fine particles and toxic substances harmful to human body, including acids, alkalis, phenols, etc., as well as dust, pollen, mites, influenza viruses, etc., and their content is dozens of times that of ordinary atmospheric water droplets. . Compared with fog, haze is more harmful to people's health. Since the diameter of the fine powdery floating particles in the haze is generally less than 0.01 micron, they can directly enter the bronchi and even the lungs through the ...
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Login to View More IPC IPC(8): H01S5/125H01S5/323
CPCH01S5/125H01S5/32325H01S5/32391
Inventor 酉艳宁
Owner 北京青辰光电科技有限公司