A purifying device and a purifying method for an aluminium nitride raw material

Abstract

A purifying device and a purifying method for an aluminium nitride raw material are disclosed. The purifying device includes a heat-insulation layer, a heating cylinder, an isolating crucible and a raw material crucible, wherein the raw material crucible is loaded with the aluminium nitride raw material and is capsulated, the raw material crucible is disposed in the isolating crucible, the isolating crucible is disposed in the heating cylinder, and the heat-insulation layer covers the heating cylinder. The purifying device reduces introduction of other impurities to the utmost in a powder material purifying process. Through arranging the isolating crucible between the raw material crucible and the heating cylinder, carbon and other elements can be effectively isolated out of the raw material crucible, thus prolonging the service lifetime of the raw material crucible and reducing entrance of carbon element into the aluminium nitride raw material.

Description

technical field [0001] The invention relates to a purification device and a purification method for aluminum nitride raw materials. Background technique [0002] Aluminum nitride belongs to III-V wide-bandgap semiconductor materials, and plays an important role in the third-generation semiconductors. Its direct bandgap can be as high as 6.2eV, and it has a light-transmitting window in the ultraviolet range. It is a good blue light Ultraviolet light-emitting materials; using special growth methods such as doping, it can also form ternary or even quaternary chemicals with other two Ⅲ-Ⅴ group chemicals GaN and InN (the direct band gap of GaN is 3.4eV, and the direct band gap of InN The forbidden band width is 0.7eV), by controlling the stoichiometric ratio of the elements in the Al, Ga, In, N quaternary compound, the forbidden band width of the compound semiconductor material can be adjusted, and a continuous luminescent spectrum from red light to ultraviolet light can be obtai...

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Problems solved by technology

However, after the heating and heat preservation structure of the metal material passes through the low temperature-high temperature-low temperature process, the metal will undergo changes such as recrystallization, which will cause the metal material with good ductility to become a hard and brittle phase. Layers cause fatal damage, which seriously reduces their lifespan. The frequent replacement of structural parts in the temperature field adds relatively expensive costs to the growth of aluminum nitride single crystals.

[0004] The medium frequency induction furnace generally uses carbon felt as the insulation layer and graphite as the heater. If this process is directly used for the purification experiment of aluminum nitride raw materials, the oxygen-containing impurities in the aluminum nitride raw materials may be completely volatilized. But it is very easy to introduce other impurities, such as carbon in carbon felt and other impurities mixed with impure carbon felt, so it is not advisable to directly use this method to purify aluminum nitride raw materials

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