Application of naphthalene tetracarboxylic acid dianhydride derivative in inverted perovskite solar cell

A technology of naphthalene tetracarboxylic dianhydride and solar cells, which is applied in the application field of naphthalene tetracarboxylic dianhydride derivatives in inverted perovskite solar cells

Active Publication Date: 2017-02-15
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the performance of PHJ perovskite solar cells is still lower than that based on other

Method used

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  • Application of naphthalene tetracarboxylic acid dianhydride derivative in inverted perovskite solar cell
  • Application of naphthalene tetracarboxylic acid dianhydride derivative in inverted perovskite solar cell
  • Application of naphthalene tetracarboxylic acid dianhydride derivative in inverted perovskite solar cell

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Embodiment example 1

[0018] N,N′-bis(1-n-hexylpyridin-1-ium-4-ylmethyl)naphthalene-1,8,4,5-bis(dicarboximide) dibromide was used as perovskite The interface modification layer of PCBM / Ag in solar cells has the following molecular structural formula:

[0019]

[0020] Step 1: ITO substrate cleaning

[0021] Use a mixture of zinc powder and dilute hydrochloric acid to etch a 1.5cm x 1.5cm ITO substrate, and then ultrasonically clean the etched ITO in deionized water, acetone, and isopropanol for 15 minutes, and finally blow it with nitrogen. Dry and irradiate in UV-ozone for 15 minutes.

[0022] Step 2: Device Preparation

[0023] (1) Preparation of modified layer device ITO / NiOx / Perovskite Layer / PCBM / Interface layer / Ag:

[0024] First (FAI: PbI2) 0.1 (CsI: PbI2) 0.1 (MAI: PbI2) 0.65 (MAI: PbCl2) 0.15 was dissolved in the solvent of GBL: DMSO=7: ​​3 (V / V), stirred for 3 hours and set aside; Drop the perovskite precursor solution into the ITO / NiOx film, rotate at 1000r / min for 20s, rotate at 4...

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Abstract

The invention relates to an application of a naphthalene tetracarboxylic acid dianhydride derivative in the aspect of interface modification of an electron transport layer/cathode in an inverted perovskite solar cell. The compound structure of the naphthalene tetracarboxylic acid dianhydride derivative is shown as the following: in the formula, R1 and R2 can be the same or different and are independently selected from C1-C20 long alkyl group chain, X is C1, Br or I, and n=0-16. The inverted perovskite solar cell device structure is: ITO/hole transport layer/perovskite layer/electron transport layer/cathode. The naphthalene tetracarboxylic acid dianhydride derivative is used on the interface of the electron transport layer/cathode in the perovskite solar cell. Firstly, the morphology of the electron transport layer can be adjusted, the defect density in the film is reduced, and the quality of the electron transport layer is improved; secondly, as the naphthalene tetracarboxylic acid dianhydride derivative interface modification layer is introduced, transport of electrons from the electron transport layer to the cathode can be effectively accelerated, and the device efficiency can be improved; and besides, as the naphthalene tetracarboxylic acid dianhydride derivative has good solubility, the naphthalene tetracarboxylic acid dianhydride derivative can be introduced to the perovskite solar cell through a solution spin coating method, the operation is extremely simple, and the repeatability is good.

Description

technical field [0001] The invention relates to the application of naphthalene tetracarboxylic dianhydride derivatives. Specifically, it relates to the application of naphthalene tetracarboxylic dianhydride compounds as interface modification materials in inverted perovskite solar cells. Background technique [0002] Over the past seven years, based on lead halide perovskites (e.g., CH 3 NH 3 PB 3 ) perovskite solar cells (PSCs) with a light-harvesting layer have gained widespread attention in the academic community, mainly due to their low-cost precursors, wide light absorption, long exciton diffusion length, solution processability and high advantages such as mechanical flexibility. Recently, scientists have made great breakthroughs in improving the performance of PSCs, with a photoelectric conversion efficiency (PCE) exceeding 20%. [0003] Perovskite semiconductors can be used in several types of solar cell structures, including perovskite-sensitized solar cells, me...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/00H10K30/80Y02E10/549
Inventor 孟鸿彭森黄维
Owner NANJING UNIV OF TECH
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