InP crystal growth furnace based on VGF (Vertical Gradient Freeze) method

Abstract

The invention discloses an InP crystal growth furnace based on a VGF (Vertical Gradient Freeze) method and belongs to the technical field of semiconductor crystal growth equipment. The InP crystal growth furnace disclosed by the invention comprises a furnace base and a furnace wall, wherein a sealed space is formed between the furnace base and the furnace wall; a vent hole is formed in the furnace base; the upper surface of the furnace base is fixedly connected with a crucible support; a crucible is arranged above the crucible support; an isolation barrel without a bottom surface is coaxially arranged on outer sides of the crucible support and the crucible; a plurality of sections of heating elements are arranged at the periphery of the isolation barrel at intervals in the vertical direction; each section of the heating element is fixedly provided with an electrode mounting base; a heating electrode is connected with each heating element through the corresponding electrode mounting base and extends to the outer part of the furnace base; and the bottom of each section of the heating element is fixedly connected with a heater mounting plate. Heat convection and heat radiation between the adjacent heating elements are separated through the heater mounting plate to keep the heating temperature of the heating elements stable.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth equipment, in particular to an InP crystal growth furnace based on a VGF method. Background technique [0002] Indium phosphide (InP) is a III-V compound semiconductor material composed of the group III element indium (In) and the group V element phosphorus (P). It has a very important strategic position in the field of semiconductor materials and is the current optoelectronic device and irreplaceable semiconductor materials for microelectronic devices. Compared with germanium and silicon materials, InP has many advantages: direct transition energy band structure, high electro-optical conversion efficiency; high electron mobility, easy to make semi-insulating materials, suitable for making high-frequency microwave devices and circuits; working temperature High; strong radiation resistance; high conversion efficiency as a solar cell material. Therefore, InP materials are wide...

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Problems solved by technology

[0005] In view of the above problems, the purpose of this invention is to provide a kind of InP crystal growth furnace based on VGF method, to solve the problem of natural convection and heat between two adjacent heating elements. The problem of the influence of radiation on the stability of the temperature distribution in the furnace is conducive to the growth of high-quality InP crystals

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