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All-solution preparation method of nanoscale pyramid suede on silicon surface

A pyramid, silicon surface technology, applied in the field of solar cells, can solve the problems of large surface carrier recombination loss, expensive equipment, and complicated preparation process.

Inactive Publication Date: 2017-03-22
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] It can be seen that in the above-mentioned scheme for preparing nano-pyramid suede, either the preparation process is complicated, or expensive equipment is required
Although in recent years some people have tried to propose a method of preparing porous silicon surface by metal-assisted chemical etching and then alkali etching to prepare nano-pyramid textured surface, but the pyramid surface prepared by this method is either extremely rough, which has a relatively large surface current carrying capacity. Sub-recombination loss, or a relatively large amount of silicon loss during the corrosion process, so it is not suitable for ultra-thin crystalline silicon cells

Method used

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  • All-solution preparation method of nanoscale pyramid suede on silicon surface
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  • All-solution preparation method of nanoscale pyramid suede on silicon surface

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Embodiment 1

[0029] The first step is the deposition of metal nanoparticles, silver nanoparticles are used here. Immerse the cleaned silicon single crystal in a mixed solution of silver nitrate and hydrofluoric acid for 10 seconds at room temperature, wherein the concentration of silver nitrate is 0.0078mol / L, and the concentration of hydrofluoric acid is 9.6vol%. Through the reduction reaction, a layer of silver nanoparticles can be uniformly deposited on the silicon surface, such as figure 1 . After depositing the silver nanoparticles, the wafers were rinsed with deionized water to remove residual acid solution.

[0030] In the second step, the above-mentioned silicon chip with silver nanoparticles deposited on the surface is immersed in an alkali solution composed of sodium hydroxide and isopropanol, wherein the concentration of sodium hydroxide is 1.1%, and the concentration of isopropanol is 8 vol%. The temperature of the solution was controlled at 55° C., and the reaction time was ...

Embodiment 2

[0033] The first step is the deposition of metal nanoparticles, silver nanoparticles are used here. Immerse the cleaned single crystal silicon in a mixed solution of silver nitrate and hydrofluoric acid for 10 seconds at room temperature, wherein the concentration of silver nitrate is 0.0078mol / L, and the concentration of hydrofluoric acid is 9.6vol%. Through the reduction reaction, a silver nanoparticle layer can be uniformly deposited on the silicon surface. After depositing the silver nanoparticles, the wafers were rinsed with deionized water to remove residual acid solution.

[0034] In the second step, the above-mentioned silicon chip with silver nanoparticles deposited on the surface is immersed in an alkali solution composed of sodium hydroxide and isopropanol, wherein the concentration of sodium hydroxide is 1.1%, and the concentration of isopropanol is 8 vol%. The temperature of the solution was controlled at 65° C., and the reaction time was 25 minutes. The wafers ...

Embodiment 3

[0037] The first step is the deposition of metal nanoparticles, silver nanoparticles are used here. Immerse the cleaned single crystal silicon in a mixed solution of silver nitrate and hydrofluoric acid at room temperature for 10 seconds, wherein the concentration of silver nitrate is 0.0078mol / L, and the concentration of hydrofluoric acid is 9.6vol%. Through the reduction reaction, a silver nanoparticle layer can be uniformly deposited on the silicon surface. After depositing the silver nanoparticles, the wafers were rinsed with deionized water to remove residual acid solution.

[0038] In the second step, the above-mentioned silicon chip with silver nanoparticles deposited on the surface is immersed in an alkali solution composed of sodium hydroxide and isopropanol, wherein the concentration of sodium hydroxide is 1.1%, and the concentration of isopropanol is 8 vol%. The temperature of the solution was controlled at 75° C., and the reaction time was 25 minutes. The wafers ...

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Abstract

The invention discloses an all-solution preparation method of nanoscale pyramid suede on the silicon surface. The method comprises the steps that 1, a silicon wafer is put into a mixed solution containing metal ions and hydrofluoric acid, so that a layer of metal nano-particles deposit on the surface of the silicon wafer, and a silicon wafer attached with the metal nano-particles is obtained; 2, the silicon wafer attached with the metal nano-particles is immersed into an alkaline solution containing additives, silicon nanoscale pyramid suede is formed at the certain temperature for certain reaction time, and a suede silicon wafer is obtained; and 3, the suede silicon wafer is soaked into an acid solution, and metal nano-particles attached to the surface are removed. According to the method, the metal particles are used for extracting electrons generated by reaction of silicon and the alkaline solution, so that the generation position of hydrogen bubbles is changed, the silicon surface is corroded evenly, and the dense nanoscale pyramid suede is generated. The process is simple, cost is low, the suede effect is perfect, and the method has important application to ultrathin crystalline silicon cells.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing a nano-pyramid textured surface on a silicon surface through an all-solution process, and its application in ultra-thin crystalline silicon solar cells. Background technique [0002] Due to the photoelectric conversion process involved in silicon-based optoelectronic devices such as silicon solar cells, silicon photodetectors, and silicon diodes, there are special requirements for the optical properties of silicon surfaces. For example, in solar cells, low surface reflection loss is required in order to absorb as much incident light as possible. To achieve this goal, surface texturing (that is, to prepare an ordered or random array of micro-nano structures on the silicon surface) is one of the effective methods. Especially when the thickness of the silicon material is smaller than the light absorption length (that is, ultra-thin crystalline silicon), it is very ...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/0236
CPCY02E10/50C30B33/10C30B29/06H01L31/02363
Inventor 沈文忠钟思华王闻捷谭杪庄宇峰
Owner SHANGHAI JIAO TONG UNIV
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