Charge-transporting varnish
A technology of charge transport and varnish, applied in the direction of circuits, electric light sources, electrical components, etc., to achieve excellent durability
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Embodiment 1-1
[0116] In a nitrogen atmosphere, 0.211 g of N,N'-bis(1-naphthyl)benzidine and 0.218 g of arylsulfonic acid represented by the formula (A1) were dissolved in 1,3-dimethyl-2-imidazolidine Ketone (hereinafter abbreviated as DMI) 15g. 3.0 g of cyclohexanol (hereinafter abbreviated as CHA) and 3.0 g of propylene glycol (hereinafter abbreviated as PG) were added thereto and stirred to prepare a charge-transporting varnish.
[0117] In addition, the aryl sulfonic acid represented by formula (A1) was synthesize|combined according to the description of International Publication No. 2006 / 025342 (the same applies below).
[0118] [chemical 4]
[0119]
Embodiment 1-2
[0121] In a nitrogen atmosphere, 0.143 g of N,N'-bis(1-naphthyl)benzidine, 0.200 g of arylsulfonic acid represented by the above formula (A1), and 0.086 g of phosphotungstic acid were dissolved in 15 g of DMI. 3.0 g of CHA and 3.0 g of PG were added thereto, stirred, and a charge-transporting varnish was prepared.
Embodiment 2-1
[0126] The charge-transporting varnish prepared in Example 1-1 was coated on an ITO substrate using a spin coater, then dried at 80°C for 1 minute, and then baked at 230°C for 15 minutes in an air atmosphere , forming a uniform thin film of 30nm on the ITO substrate. As the ITO substrate, a 25 mm × 25 mm × 0.7t glass substrate with a pattern of film thickness of 150 nm formed on the surface of indium tin oxide (ITO) was used. 2 A plasma scrubber (150W, 30 seconds) removes impurities on the surface.
[0127] Next, use a vapor deposition device (vacuum degree 1.0×10 -5 Pa), on the ITO substrate on which the thin film was formed, N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD), tris(8-hydroxyquinoline) Phenyl)aluminum(III)(Alq 3 ), lithium fluoride, and a thin film of aluminum to obtain an organic EL element. At this time, according to α-NPD, Alq 3 Aluminum and aluminum were deposited at a deposition rate of 0.2 nm / sec, and lithium fluoride at a deposition rate of 0.02 n...
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