Method for representing residual stress of film

A residual stress and thin film technology, applied in the field of thin film characteristic characterization, can solve problems affecting the performance of integrated circuits

Inactive Publication Date: 2017-03-29
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

If the excessive residual stress in the thin film cannot be detected in time during the manufacturing process of the integra...

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  • Method for representing residual stress of film
  • Method for representing residual stress of film
  • Method for representing residual stress of film

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Embodiment Construction

[0016] The test curve of the surface acoustic wave propagating on the sample surface was measured by the laser-excited surface acoustic wave experimental system, and the schematic diagram of the laser-excited surface acoustic wave detection system for residual stress of the film is as follows figure 1 As shown, the MNL 801S nitrogen molecular laser is used, the wavelength is 337.1nm, and the average pulse energy is 400uJ. The piezoelectric sensor consists of a polyvinylidene fluoride film (PVDF) and a self-made wedge probe. The amplifier is MITEQ AU-1338 type high frequency broadband voltage amplifier, the digital oscilloscope adopts Tektronics TDS3000B type, the bandwidth is 300MHz, and the highest sampling rate is 2.5GS / s. The sample used in the experiment is a film / substrate structure. In order to make the results more accurate, it is necessary to ensure that the measured samples belong to the same batch and have highly similar Young's modulus, density and Poisson's ratio. ...

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Abstract

The invention relates to a method for representing a residual stress of a film. The method comprises that a sample wafer of a film/substrate structure is used, a laser is controlled to emit a burst-pulse laser beam of certain frequency and energy, a linear laser beam is gathered in the surface of the sample wafer, and the surface of the sample wafer generates surface supersonic waves; a piezoelectric transducer carries out detection and collects discrete time-domain voltage signals; an experimental dispersion curve is obtained; modeling is carried out, and a theoretical dispersion curve of a film/substrate model in a residual-stress-free state is obtained; and the experimental dispersion curve is compared with the theoretical dispersion curve, a residual stress magnitude sequence of films of sample wafers is determined qualitatively. The residual stress of the film can be detected rapidly and losslessly.

Description

technical field [0001] The invention belongs to the field of thin film characteristic characterization, and relates to a method for non-destructive detection of thin film residual stress by ultrasonic surface wave technology. Background technique [0002] The residual stress in the film is divided into compressive stress and tensile stress in terms of the external effect of force. When the compressive stress is too large, the film will buckle, which will weaken the adhesion of the film and separate the film from the substrate; When the tensile stress is too large, the film will wrinkle or even crack. If the excessive residual stress in the thin film cannot be detected in time during the manufacturing process of the integrated circuit and the next step of work is continued, the performance of the integrated circuit will inevitably be seriously affected. Therefore, the detection of residual stress in thin films is of great significance. The principle of ultrasonic surface wa...

Claims

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Application Information

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IPC IPC(8): G01L5/00
CPCG01L5/0047
Inventor 肖夏睢晓乐戚海洋
Owner TIANJIN UNIV
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