Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

STI diode for ESD protection

A diode and fin technology, applied in the field of STI diodes, can solve the problems of high expansion resistance, high current non-uniformity, damage, etc., and achieve the effect of improving area efficiency, good uniformity, and small on-resistance

Active Publication Date: 2017-04-05
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Small silicide regions defined by Li produce higher spreading resistance and higher current non-uniformity, which lead to localized damage under high current stress

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • STI diode for ESD protection
  • STI diode for ESD protection
  • STI diode for ESD protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Below, refer to Figure 3A and Figure 3B An STI diode for ESD protection proposed by an embodiment of the present invention will be described. in, Figure 3A It is a plane layout diagram of a STI diode for ESD protection according to an embodiment of the present invention; Figure 3B for correspondence Figure 3A A schematic cross-sectional view of an STI diode used for ESD protection according to an embodiment of the present invention obtained by the hatching line.

[0040] Exemplarily, an STI diode for ESD protection according to an embodiment of the present invention includes:

[0041] The semiconductor substrate 100, specifically, the semiconductor substrate 100 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), and germanium-on-insulator Silicon (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0042] A well region with a first conductivity type i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an STI diode for ESD protection, and relates to the technical field of semiconductors. The diode comprises a semiconductor substrate, wherein the interior of the semiconductor substrate is provided with a well region of a first conductive type; a plurality of first fins which are located on the semiconductor substrate and extend in a first direction, wherein the interior of each first fin is provided with a first doped region of a first conductive type, which extends in the first direction; a plurality of second fins which are located among the first fins and extend in the first direction, wherein the interior of each second fin is provided with a second doped region of a second conductive type, which extend in the first direction; and an isolation structure which is formed on the semiconductor substrate between the first fins and the second fins. The diode provided by the invention improves the area efficiency of a device, enables the uniformity of metal silicide to be better, and enables an ESD device to be higher in secondary breakdown current and smaller in on resistance (Ron).

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an STI diode used for ESD protection. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. Currently, the semiconductor industry has progressed to nanotechnology process nodes in pursuit of high device density, high performance, and low cost. However, this progressive trend has a negative impact on the reliability of end products: In the field of semiconductor technology, the electrostatic discharge (ESD) phenomenon is a major threat to integrated circuits, which can break down integrated circuits and semiconductor components, causing Component aging reduces production yield. Therefore, with the continuous reduction of the size of the semiconductor manufacturing process, the ESD ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/861H01L27/02
CPCH01L27/0255H01L29/861
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com