A kind of graphene semiconductor composite material and preparation method thereof

A technology of graphene semiconductor and composite materials, which is applied in the field of preparation of graphene semiconductor composite materials, can solve the problems of graphene sheet structure damage, complex production process, high equipment requirements, etc., achieve broad market application prospects, increase contact area, The effect of excellent performance

Active Publication Date: 2018-12-28
日照鲁光电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, not only the production process is complicated, the reduction process requires heating, the equipment requirements are high, the production cost is high, but also the graphene sheet structure will be damaged, and it will have an impact on the environment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Dissolve sodium dodecylbenzenesulfonate used for graphene dispersion into pure water to prepare an aqueous solution with a mass fraction of 1%, and the total weight of the solution is 1000g;

[0030] (2) Disperse 100g of graphite powder in the surfactant aqueous solution in step (1), add 2g of chemical stripping agent, stir for 2h, and the stirring speed is 14000r / min; the chemical stripping agent consists of pyrrolidone, chlorinated 1- Octyl-3-methylimidazolium salt, benzoic acid and sodium chloride are composed in a mass ratio of 100:30:3:15;

[0031] (3) Then add 20g of semiconductor material particles silicon carbide as both a stripping agent and a complex, and stir for 10 hours; during the stirring process, a large number of tiny semiconductor particles significantly increase the number of collisions and contacts in the graphite stripping process, and at the same time The prepared graphene is uniformly dispersed, and the semiconductor material is evenly compoun...

Embodiment 2

[0035] (1) Dissolve sodium lauryl sulfate used as graphene dispersion into pure water to prepare an aqueous solution with a mass fraction of 1%, and the total weight of the solution is 1000g;

[0036] (2) Disperse 100g of graphite powder in the surfactant aqueous solution in step (1), add 1g of chemical stripping agent, stir for 1h, and the stirring speed is 12000r / min; the chemical stripping agent consists of imidazolinone, chlorinated 1-butyl-3-methylimidazolium salt, 2-naphthoic acid and sodium sulfate are composed in a mass ratio of 100:40:5:15;

[0037](3) Then add 50 g of gallium nitride as both a stripping agent and a composite semiconductor material particle, the particle size of the semiconductor material particle is 2-10 μm, and the stirring time is 15 hours; during the stirring process, a large number of tiny semiconductor particles Significantly increased the number of collisions and contacts in the graphite exfoliation process, and at the same time made the prepar...

Embodiment 3

[0041] (1) Dissolve the quaternary ammonium salt used for graphene dispersion into pure water to prepare an aqueous solution with a mass fraction of 1%, and the total weight of the solution is 1000g;

[0042] (2) Disperse 100g of graphite powder in the surfactant aqueous solution in step (1), add 0.5g of chemical stripping agent, stir for 1.5h, and the stirring speed is 10000r / min; the chemical stripping agent consists of amide, 1- Butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide salt, 1-pyrenecarboxylic acid, and potassium sulfate are composed of a mass ratio of 100:45:4:20;

[0043] (3) Then add 80g of zinc oxide as a stripping agent and as a composite semiconductor material particle, the particle size of the semiconductor material particle is 0.01μm-10μm, and the stirring time is 20 hours; during the stirring process, a large number of tiny semiconductor particles Significantly increased the number of collisions and contacts in the graphite exfoliation process, a...

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Abstract

The invention belongs to the field of graphene composite materials, and discloses a graphene semiconductor composite material and a preparing method. According to the method, in the process of peeling graphite into graphene, the graphite becomes easier to peel through the pre-chemical reaction of chemical peeling liquid; meanwhile, in the peeling process, semiconductor material particles are added in the graphite peeling process in advance, and the contact area and the peeling frequency in the peeling process are increased through a large number of tiny semiconductor particles; the graphite is subjected to a large number of peeling processes within short time through the shearing and impacting actions on the graphite from the semiconductor particles, accordingly the peeling efficiency is obviously improved, semiconductor materials are evenly combined on the surface of graphene, a layer composition structure is formed, and the graphene semiconductor composite material is obtained. The method is easier to operate, the requirement for equipment is low, conditions are moderate, and energy saving and environment friendliness are achieved.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for preparing a graphene semiconductor composite material and a product thereof. Background technique [0002] Graphene is carbon atoms through sp 2 A single-layer two-dimensional crystal formed by hybridization and mutual bonding is the basic structural unit for constructing other dimensional carbon materials (zero-dimensional fullerenes, one-dimensional carbon nanotubes, and three-dimensional graphite). Since its discovery in 2004, it has generated enormous interest throughout the scientific community. Due to its unique chemical structure and geometric structure, it has broad application prospects in the fields of nanoelectronic devices, energy storage materials, catalysis, sensors, drug carriers, and functional composite materials. In the field of biomedicine, graphene and its composites offer exciting opportunities in a wide range of applications, incl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/19C01B32/956C01B32/25C01G9/02
CPCC01G9/02Y02P20/54
Inventor 陈庆曾军堂王镭迪
Owner 日照鲁光电子科技有限公司
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