Unlock instant, AI-driven research and patent intelligence for your innovation.

Ultraviolet detector, preparation method thereof, and method for modulating sensitivity by stress

A detector, ultraviolet light technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low response to low-intensity light, visible light interference, etc., to reduce dark current, good flexibility, improve The effect of utilization

Active Publication Date: 2017-04-26
BEIJING INST OF NANOENERGY & NANOSYST
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the shortcomings of the ultraviolet light detector in the prior art that are easily disturbed by visible light and low responsivity to low-intensity light, and provide a ultraviolet light detector with high light responsivity to low light intensity and Method of making it, and method of stressing it to modulate sensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet detector, preparation method thereof, and method for modulating sensitivity by stress
  • Ultraviolet detector, preparation method thereof, and method for modulating sensitivity by stress
  • Ultraviolet detector, preparation method thereof, and method for modulating sensitivity by stress

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0052] Such as figure 1 Said, the preparation method of the ultraviolet photodetector of an embodiment of the present invention, comprises the following steps:

[0053] S101, forming the lower electrode 2 on the substrate 1;

[0054] S102, forming a lower photosensitive layer 3 on the lower electrode 2;

[0055] S103, forming an insulating layer 4 on the lower photosensitive layer 3;

[0056] S104, forming an upper photosensitive layer 5 on the insulating layer 4;

[0057] S105, forming an upper electrode 6 on the upper photosensitive layer 5;

[0058] S106 , encapsulating the substrate 1 , the lower electrode 2 , the lower photosensitive layer 3 , the insulating layer 4 , the upper photosensitive layer 5 and the upper electrode 6 .

[0059] Through the above technical scheme, the insulating layer 4 is added to the traditional PN heterojunction. Due to the existence of the insulating layer 4, the barrier height at the interface between the upper photosensitive layer 5 and ...

Embodiment approach

[0060] According to one embodiment of the present invention, the base 1 and the lower electrode 2 adopt the existing PET-ITO conductive film.

[0061]According to one embodiment of the present invention, the lower photosensitive layer 3 is a CuI photosensitive layer, and the upper photosensitive layer 5 is a ZnO photosensitive layer; the step of forming the CuI photosensitive layer is: sputtering on the lower electrode 2 with a thickness of about 60 nanometer Cu film, fix it in a petri dish, put 2-3 grains of iodine particles in another petri dish, buckle the petri dish fixed with Cu film upside down on the petri dish with iodine particles, put Place the two petri dishes on the heating platform and heat them to 150 degrees Celsius for 15 minutes. The iodine is heated to a vapor state and reacts with the Cu film. When the red Cu film gradually turns into a transparent CuI film, a CuI photosensitive layer is obtained. , the thickness of the CuI photosensitive layer may be 300 na...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductor light detectors and discloses an ultraviolet detector, a preparation method thereof, and a method for modulating sensitivity by stress. The preparation method of the ultraviolet detector comprises a step of forming a lower electrode on a substrate, a step of forming a lower photosensitive layer on the lower electrode, a step of forming an insulation layer on the lower photosensitive layer, a step of forming an upper photosensitive layer on the insulation layer, a step of forming an upper electrode on the upper photosensitive layer, and a step of packaging the substrate, the lower electrode, the lower photosensitive layer, the insulation layer, the upper photosensitive layer and the upper electrode. The sensitivity of the ultraviolet detector prepared by the preparation method is high in low light intensity, and the ultraviolet detector has better performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor photodetectors, in particular to an ultraviolet photodetector and a method for its preparation and stress modulation sensitivity. Background technique [0002] In the prior art, ultraviolet photodetectors mainly use a single or composite wide bandgap semiconductor as the basic unit of photodetectors. [0003] However, due to the large spectral width of the incident spectrum, when the ultraviolet spectrum is detected, the visible light radiation in the incident spectrum will interfere with its measurement results. [0004] The ultraviolet light detectors in the prior art are generally integrated with other components on a single chip, and these components are based on silicon-based processes, which makes it difficult to meet the requirements of flexibility and wearability. In addition, for high-end products with transparent visualization, transparency and flexibility become the basic require...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/09
CPCH01L31/09H01L31/18Y02P70/50
Inventor 刘彩红张洋翟俊宜
Owner BEIJING INST OF NANOENERGY & NANOSYST