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Method for preparing al2o3 tritium barrier coating by gas pulse reactive sputtering

A technology of gas pulse and sputtering method, which is applied in the direction of coating, sputtering plating, metal material coating process, etc., to achieve the effect of easy phase formation, strong repeatability, and simple process operation

Inactive Publication Date: 2019-03-05
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently no research on combining gradients with multilayer structures to prepare new hybrid coatings to further improve coating performance or to find new properties of materials

Method used

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  • Method for preparing al2o3 tritium barrier coating by gas pulse reactive sputtering
  • Method for preparing al2o3 tritium barrier coating by gas pulse reactive sputtering
  • Method for preparing al2o3 tritium barrier coating by gas pulse reactive sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Substrate pretreatment

[0033] Use 180#, 240#, 600#, 1000#, 1200# water sandpaper to polish the CLF-1 substrate in sequence from coarse to fine, and then polish it with 1μm diamond polishing agent, W1 polishing powder, W1 polishing paste, and electrolytic polishing , degreasing, pickling, and finally rinsed with deionized water and dried for use; the degreasing agent formula is composed of sodium carbonate 160g / L, sodium citrate 45g / L, active agent 5g / L, sodium phosphate 50g / L .

[0034] (2) Bias backsplash cleaning

[0035] Deflate the vacuum multi-functional magnetron sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the CLF-1 wafer processed in step (1) on the sample stage of the vacuum chamber, and first pump the vacuum chamber to a low vacuum , after the molecular pump pumps high vacuum to a vacuum degree of 5×10 -4 After Pa, the bias voltage backsplash cleaning, the backsplash bias vo...

Embodiment 2

[0043] (1) Substrate pretreatment

[0044] Use 180#, 240#, 600#, 1000#, 1200# water sandpaper to polish the CLF-1 substrate in sequence from coarse to fine, and then polish it with 1μm diamond polishing agent, W1 polishing powder, W1 polishing paste, and electrolytic polishing , degreasing, pickling, and finally rinsed with deionized water and dried for use; the degreasing agent formula is composed of sodium carbonate 160g / L, sodium citrate 45g / L, active agent 5g / L, sodium phosphate 50g / L .

[0045] (2) Bias backsplash cleaning

[0046] Deflate the vacuum multi-functional magnetron sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the CLF-1 wafer processed in step (1) on the sample stage of the vacuum chamber, and first pump the vacuum chamber to a low vacuum , after the molecular pump pumps high vacuum to a vacuum degree of 5×10 -4 After Pa, the bias voltage backsplash cleaning, the backsplash bias vo...

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Abstract

The invention discloses a gas pulse reactive sputtering method for preparing Al 2 o 3 The process of tritium-blocking coating, which includes substrate pretreatment, bias backsputter cleaning, and deposition of Al on the surface of CLF‑1 substrate by using high vacuum reactive magnetron sputtering equipment 2 o 3 Tritium barrier coating, annealing and other steps, O in the sputtering process 2 The traffic changes periodically. The method provided by the invention has simple operation, and the prepared Al 2 o 3 The coating has a multi-layer and composition gradient hybrid dual-phase structure. After annealing, α-Al 2 o 3 Easier to form phases, CLF‑1 matrix material is significantly less oxidized.

Description

technical field [0001] The invention relates to a preparation method of a tritium-blocking coating, in particular to the preparation of Al by a gas pulse reactive sputtering method. 2 o 3 Tritium barrier coating method. Background technique [0002] The advantages of fusion energy in terms of cleanliness, safety, and rich fuel reserves have attracted much attention. With the construction of the International Thermonuclear Experimental Reactor (ITER) and the deepening of related research, the core technology carrier for fusion energy to be applied —The structure and material design of the cladding has become a research hotspot. Among them, because tritium, an important fuel for D-T thermonuclear reaction, has extremely strong penetration and diffusivity, coupled with complex environments such as high temperature, high heat load, and irradiation, it is very easy to cause tritium multiplication region structural materials in the cladding (such as low activity ferrite Martens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/02C23C14/58
CPCC23C14/0084C23C14/02C23C14/081C23C14/35C23C14/5806
Inventor 杨吉军王龙冯勇进廖家莉杨远友冯开明刘宁
Owner SICHUAN UNIV