Method for preparing al2o3 tritium barrier coating by gas pulse reactive sputtering
A technology of gas pulse and sputtering method, which is applied in the direction of coating, sputtering plating, metal material coating process, etc., to achieve the effect of easy phase formation, strong repeatability, and simple process operation
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Embodiment 1
[0032] (1) Substrate pretreatment
[0033] Use 180#, 240#, 600#, 1000#, 1200# water sandpaper to polish the CLF-1 substrate in sequence from coarse to fine, and then polish it with 1μm diamond polishing agent, W1 polishing powder, W1 polishing paste, and electrolytic polishing , degreasing, pickling, and finally rinsed with deionized water and dried for use; the degreasing agent formula is composed of sodium carbonate 160g / L, sodium citrate 45g / L, active agent 5g / L, sodium phosphate 50g / L .
[0034] (2) Bias backsplash cleaning
[0035] Deflate the vacuum multi-functional magnetron sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the CLF-1 wafer processed in step (1) on the sample stage of the vacuum chamber, and first pump the vacuum chamber to a low vacuum , after the molecular pump pumps high vacuum to a vacuum degree of 5×10 -4 After Pa, the bias voltage backsplash cleaning, the backsplash bias vo...
Embodiment 2
[0043] (1) Substrate pretreatment
[0044] Use 180#, 240#, 600#, 1000#, 1200# water sandpaper to polish the CLF-1 substrate in sequence from coarse to fine, and then polish it with 1μm diamond polishing agent, W1 polishing powder, W1 polishing paste, and electrolytic polishing , degreasing, pickling, and finally rinsed with deionized water and dried for use; the degreasing agent formula is composed of sodium carbonate 160g / L, sodium citrate 45g / L, active agent 5g / L, sodium phosphate 50g / L .
[0045] (2) Bias backsplash cleaning
[0046] Deflate the vacuum multi-functional magnetron sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the CLF-1 wafer processed in step (1) on the sample stage of the vacuum chamber, and first pump the vacuum chamber to a low vacuum , after the molecular pump pumps high vacuum to a vacuum degree of 5×10 -4 After Pa, the bias voltage backsplash cleaning, the backsplash bias vo...
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