Organic electroluminescent element
An electroluminescent and organic technology, applied in the field of organic electroluminescent elements, can solve the problems of silver ion migration, short circuit, affecting the luminescent effect of silver thin film, etc., and achieve the effect of avoiding deterioration
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[0058] The embodiment of the present invention also provides a method for preparing an organic electroluminescent element, comprising the following steps:
[0059] Step 1: Provide a substrate, which can be a rigid substrate or a flexible substrate, including but not limited to glass substrates, quartz substrates, metal substrates, organic polymer substrates, metal oxide substrates, ultrasonic cleaning, etc. The prior art method for cleaning the substrate;
[0060] Step 2: Fabricate a TFT array on the cleaned glass substrate. The related process includes the following steps. Step 1: Prepare a polysilicon layer, Step 2: Prepare a gate, Step 3: Prepare an insulating layer, and Step 4: Forming a data line layer, step 5: preparing a buffer layer, step 6: preparing a planarization layer;
[0061] Step 3: Prepare organic light-emitting diodes on the TFT array. The related process includes the following steps. Step 1: Prepare anode 1, Step 2: Prepare protective layer 3, Step 3: Prepa...
Embodiment 1
[0065] refer to Figure 4A to Figure 4F After the preparation of the anode 1 is completed, a protective layer 3 made of inorganic materials is prepared on the anode 1 , and the protective layer 3 in this embodiment covers the side surface and part of the upper surface of the anode 1 .
[0066] The preparation process is as follows:
[0067] Step S1: if Figure 4A with Figure 4B As shown, after the preparation of the anode 1 is completed, a protective layer 3 made of inorganic materials is prepared on the side and upper surface of the anode 1;
[0068] Step S2: if Figure 4C As shown, a photoresist mask 4 is formed on the protective layer 3;
[0069] Step S3: if Figure 4D As shown, the protective layer 3 not covered by the photoresist mask 4 is removed by etching;
[0070] Step S4: if Figure 4E As shown, the photoresist mask 4 is stripped off to form a protective layer 3 .
[0071] Step S5: Next, a pixel definition layer 2 is formed on the protective layer 3, such as...
Embodiment 2
[0073] refer to Figure 5A to Figure 5E After the preparation of the anode 1 is completed, a protective layer 3 composed of a conductive semiconductor material is prepared on the anode 1 , and the protective layer 3 in this embodiment covers the side surfaces and the entire upper surface of the anode 1 .
[0074] The preparation process is as follows:
[0075] Step S1': if Figure 5A with Figure 5B As shown, after the preparation of the anode 1 is completed, a protective layer 3 composed of a conductive semiconductor material is prepared on the side and upper surface of the anode 1;
[0076] Step S2': if Figure 5C As shown, a photoresist mask 4 is formed on the protective layer 3 to cover a predetermined area of the protective layer 3;
[0077] Step S3': if Figure 5D As shown, the redundant protective layer structure is etched, and the photoresist mask 4 is stripped to form the protective layer 3 .
[0078] Step S4': then prepare the pixel definition layer 2 on the ...
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