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Controllable preparation method of Cu2ZnSnS4 nano-crystalline material

A technology of nanocrystalline material and copper acetate, which is applied in the field of nanomaterials and nanometers, can solve the problems of long reaction time and high temperature, and achieve the effect of simple process, low cost and good reproducibility

Active Publication Date: 2017-05-10
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, Cu 2 ZnSnS 4 The preparation of nanocrystalline materials usually uses elemental sulfur as the sulfur source precursor, which requires higher temperature and longer reaction time in the preparation process.
In addition, this kind of preparation process is very easy to generate Cu 2 SnS 3 Miscellaneous

Method used

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  • Controllable preparation method of Cu2ZnSnS4 nano-crystalline material

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Experimental program
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Effect test

Embodiment 1

[0026] Cu 2 ZnSnS 4 The controllable preparation method of nanocrystalline material comprises the following steps:

[0027] (1) Add 2mmol copper acetate, 1mmol zinc acetate, and 1mmol tin tetrachloride to 20mL oleylamine, pass in argon protection gas, control the temperature at 50°C, and stir rapidly for 5 minutes to make copper acetate, zinc acetate 1. The tin tetrachloride is completely dissolved to obtain a complex solution of the metal salt;

[0028] (2) Add 3 mL of a diphenyl ether solution with a concentration of 1 mol / L diphenylthiourea to the above metal salt solution, heat to a set temperature of 100°C and react for 1 minute;

[0029] (3) After the reaction is over, cool to room temperature, add a large amount of methanol to the Cu obtained by the reaction 2 ZnSnS 4 Nanocrystals are cleaned to obtain Cu 2 ZnSnS 4 nanocrystalline material.

[0030] This embodiment prepares Cu 2 ZnSnS 4 The particle size of the nanocrystalline material is 1.9nm, and its TEM ima...

Embodiment 2

[0032] Cu 2 ZnSnS 4 The controllable preparation method of nanocrystalline material comprises the following steps:

[0033] (1) Add 2mmol copper acetate, 1mmol zinc acetate, and 1mmol tin tetrachloride to 20mL oleylamine, pass in argon protection gas, control the temperature at 60°C, and stir rapidly for 10 minutes to make copper acetate, zinc acetate 1. The tin tetrachloride is completely dissolved to obtain a complex solution of the metal salt;

[0034] (2) Add 4 mL of a diphenyl ether solution with a concentration of 1 mol / L diphenylthiourea to the above metal salt solution, heat to a set temperature of 140°C and react for 5 minutes;

[0035] (3) After the reaction is over, cool to room temperature, add a large amount of methanol to the Cu obtained by the reaction 2 ZnSnS 4 Nanocrystals are cleaned to obtain Cu 2 ZnSnS 4 nanocrystalline material.

[0036] This embodiment prepares Cu 2 ZnSnS 4 The particle size of the nanocrystalline material is 3.9nm, and its TEM i...

Embodiment 3

[0038] Cu 2 ZnSnS 4 The controllable preparation method of nanocrystalline material comprises the following steps:

[0039] (1) Add 2mmol copper acetate, 1mmol zinc acetate, and 1mmol tin tetrachloride to 20mL oleylamine, pass in argon protection gas, control the temperature at 70°C, and stir rapidly for 15 minutes to make copper acetate, zinc acetate 1. The tin tetrachloride is completely dissolved to obtain a complex solution of the metal salt;

[0040] (2) Add 5 mL of a diphenyl ether solution with a concentration of 1 mol / L diphenylthiourea to the above metal salt solution, heat to a set temperature of 180°C and react for 10 minutes;

[0041] (3) After the reaction is over, cool to room temperature, add a large amount of methanol to the Cu obtained by the reaction 2 ZnSnS 4 Nanocrystals are cleaned to obtain Cu 2 ZnSnS 4 nanocrystalline material.

[0042] This embodiment prepares Cu 2 ZnSnS 4 The particle size of the nanocrystalline material is 5.5nm, and its TEM im...

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Abstract

The invention belongs to the technical field of a nano material and a nano technology, and more specifically relates to a controllable preparation method of a Cu2ZnSnS4 nano-crystalline material. The preparation method comprises the following steps: adding copper acetate, zinc acetate and stannic chloride in oleylamine, introducing argon as protection gas, stirring copper acetate, zinc acetate and stannic chloride under certain temperature for completely dissolving the materials to obtain a complexation solution of metal salt; heating the complexation solution of metal salt to set temperature, adding a diphenyl ether solution of thiocarbanilide; after the reaction is complete, cooling the material to the room temperature, cleaning the reaction products by methanol to obtain the Cu2ZnSnS4 nano-crystalline material. The method selects thiocarbanilide as a sulfur source, employs a heat injection method to prepare the Cu2ZnSnS4 nano-crystalline material, the Cu2ZnSnS4 nano-crystalline material is obtained by controlling the addition proportion of the precursor, and the Cu2ZnSnS4 nano-crystallines with different size is obtained by controlling the reaction temperature and the reaction time.

Description

technical field [0001] The invention belongs to the field of nanomaterials and nanotechnology, and specifically relates to a Cu 2 ZnSnS 4 A method for the controllable preparation of nanocrystalline materials. Background technique [0002] As the size of semiconductor nanocrystalline materials changes, their optical and electrical properties will change significantly. A unique quantum size effect occurs when the size of the nanocrystal is smaller than its Bohr radius. Therefore, the study of semiconductor nanocrystalline materials has received extensive attention, and has been widely used in solar cells, light-emitting diodes and other fields. At present, nanocrystalline materials such as cadmium sulfide and lead sulfide have been widely studied, and their good physical properties make them widely used. Cu 2 ZnSnS 4 As a multi-component semiconductor material, it has a high light absorption coefficient (>10 4 cm -1 ) and a suitable band gap (~1.5eV), changing the ...

Claims

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Application Information

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IPC IPC(8): C01G19/00B82Y30/00
CPCC01G19/006C01P2002/72C01P2002/85C01P2004/04C01P2004/51C01P2004/64
Inventor 刘曰利陈克强陈文周静
Owner WUHAN UNIV OF TECH
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