Metal halide perovskite quantum dot CsSnX3 and preparation method thereof

A metal halide, quantum dot technology, applied in chemical instruments and methods, nanotechnology, nano-optics and other directions, can solve the problems of difficulty in controlling the particle size of quantum dots, affecting performance, and high defect density of quantum dots, and achieving a simple method. Easy control, low cost, high luminous efficiency

Inactive Publication Date: 2017-05-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a kind of metal halide perovskite quantum dot CsSnX 3 The preparation method aims to solve the problem that the existing inorganic metal halide perovskite quantum dot material preparation method is difficult to control the particle size of quantum dots, which leads to the high defect density of the obtained quantum dots and affects its performance.

Method used

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preparation example Construction

[0019] The embodiment of the present invention provides a metal halide perovskite quantum dot CsSnX 3 The preparation method comprises the following steps:

[0020] S01. Provide CsX, the first main solvent and the first co-solvent, and perform the first heating and stirring after mixing to prepare the Cs precursor;

[0021] S02. Provide SnX 2 , the second main solvent and the second co-solvent, after mixing, carry out the second heating and stirring to prepare the Sn precursor;

[0022] S03. After heating the Sn precursor to 100-200°C, add the Cs precursor, stir, and react at a constant temperature for 10-20min to prepare metal halide perovskite quantum dots CsSnX 3 ;

[0023] Among them, the CsX, SnX 2 wherein, X is at least one of Cl, Br, and I, the first co-solvent is allyl diethyl phosphate or N,N-dimethylformamide, and the second co-solvent is allyl phosphate diethyl ester or N,N-dimethylformamide.

[0024] Specifically, in the above step S01, the first main solvent...

Embodiment 1

[0047] A Metal Halide Perovskite Quantum Dot CsSnCl 3 The preparation method comprises the following steps:

[0048] S11. Preparation of Cs precursor

[0049] Add 0.285g of cesium chloride (CsCl) and 5mL of oleylamine into a 100mL three-necked flask, heat and dissolve under Ar atmosphere; add 8mL of allyl diethyl phosphate into the three-necked flask, stir evenly and keep the temperature at 120°C Cs precursor.

[0050] S12. Preparation of Sn precursor

[0051] 0.361g stannous chloride (SnCl 2 ), 5mL oleylamine was added to a 100mL three-necked flask, stirred and heated under an Ar atmosphere and dissolved; 18mL allyl diethyl phosphate was added to a 100mL three-necked flask, stirred evenly and kept at a constant temperature of 120°C to form a Sn precursor solution.

[0052] S13.CsSnCl 3 Synthesis and purification of perovskite quantum dots

[0053] When the temperature of the Sn precursor solution rises to 180°C, adjust the stirring speed to 1800rpm and quickly inject th...

Embodiment 2

[0056] A Metal Halide Perovskite Quantum Dot CsSnCl 3 The preparation method comprises the following steps:

[0057] S21.Cs precursor preparation

[0058] Add 0.285g cesium chloride (CsCl) and 4.5mL trioctylphosphine into a 100mL three-necked flask, heat and dissolve under Ar atmosphere with stirring; add 18ML N,N-dimethylformamide into the three-necked flask, stir well And keep the temperature at 120°C to form the Cs precursor solution.

[0059] S22. Preparation of Sn precursor

[0060] 0.361g stannous chloride (SnCl 2 ), 4.5mL trioctylphosphine were added to a 100mL three-necked flask, heated and dissolved with stirring under an Ar atmosphere; Precursor.

[0061] S23.CsSnCl 3 Synthesis and purification of perovskite quantum dots

[0062] When the temperature of the Sn precursor solution rises to 180°C, adjust the stirring speed to 1800rpm and quickly inject the Cs precursor solution. After reacting at 170°C for 2mins, the reaction solution was quickly cooled to 50°C ...

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Abstract

The invention provides a preparation method of a metal halide perovskite quantum dot CsSnX3. The method comprises the following steps of providing CsX, a first main solvent and a first cosolvent; after mixing, performing first heating stirring; preparing a Cs precursor; providing SnX2, a second main solvent and a second cosolvent; after mixing, performing second heating stirring; preparing an Sn precursor; heating the Sn precursor; after the temperature rises to 100 to 200 DEG C, adding the Cs precursor; performing stirring treatment; performing constant-temperature reaction for 10 to 20 min; preparing and obtaining the metal halide perovskite quantum dot CsSnX3, wherein in the CsX and the SnX2, the X is at least one of Cl, Br and I; the first cosolvent is diethyl allyl phosphate or N, N-dimethylformamide; the second cosolvent is diethyl allyl phosphate or N, N-dimethylformamide.

Description

technical field [0001] The invention belongs to the technical field of quantum dot synthesis, in particular to a metal halide perovskite quantum dot CsSnX 3 and its preparation method. Background technique [0002] Traditional photovoltaic materials have been restricting the development and growth of the photovoltaic industry due to their high cost and low energy conversion rate. In recent years, studies have found that organic-inorganic metal halide perovskite materials have the advantages of high light conversion efficiency, wide luminous spectrum, small hole-electron recombination energy, and high carrier mobility. And biomedical field has broad application prospects. Compared with organic-inorganic metal halide perovskite materials, all-inorganic metal halide perovskite materials exhibit better optical and electrical stability, and have broader application prospects. [0003] Quantum dot materials are considered to be new optoelectronic materials with great potential ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/66B82Y20/00B82Y40/00
CPCC09K11/665B82Y20/00B82Y40/00
Inventor 丘洁龙刘政
Owner TCL CORPORATION
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