Cadmium zinc oxygen alloy film and preparing method thereof

An alloy film and cadmium-zinc technology, applied in the field of cadmium-zinc-oxygen alloy film and its preparation, can solve the problems of inability to produce at low cost, complex preparation process, expensive equipment and the like, and achieve simple and mature preparation process, good repeatability, The effect of inexpensive equipment

Inactive Publication Date: 2010-03-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the methods they use are molecular beam epitaxy and remote plasma-enhanced metal-organic chemical vapor deposition. The equipment used is expensive and the preparation process is complicated, which cannot be used in large-scale and low-cost production in industrial production.
The equipment used by magnetron sputtering is relatively cheap, and it is a commonly used thin film preparation equipment in the semiconductor industry. However, so far, there has been no report on the use of magnetron sputtering to prepare cadmium zinc oxide thin films with tunable wavelengths in the entire visible light range.

Method used

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  • Cadmium zinc oxygen alloy film and preparing method thereof
  • Cadmium zinc oxygen alloy film and preparing method thereof
  • Cadmium zinc oxygen alloy film and preparing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Take the following process steps: 1) Ball mill the cadmium and zinc particles according to the atomic content ratio of 0:1, 1:9, 2:8, 3:7, 4:6, 5:5 and press them into cadmium with different components Zinc alloy target; 2) Clean and polish the silicon wafer, put it into the reaction chamber of the DC reactive magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 5×10 -3 Pa, with cadmium-zinc alloys of different components as targets, a cadmium-zinc-oxygen alloy film with a thickness of about 300nm was deposited on a silicon wafer by reactive direct current sputtering. During sputtering, the substrate temperature was 500°C, The radiation power is 80w, the flow rate is 30 and 15sccm, and the working pressure is 10Pa.

[0019] figure 1 The standard morphology of the prepared cadmium-zinc-oxygen alloy film is given, and it can be seen from the figure that the film is a hexagonal polycrystalline film. figure 2 The X-ray diffraction patte...

Embodiment 2

[0021] Take the following process steps: 1) Ball mill the cadmium and zinc particles according to the atomic content ratio of 0:1, 1:9, 2:8, 3:7, 4:6, 5:5 and press them into cadmium with different components Zinc alloy target; 2) Clean the double-sided polished quartz sheet, put it into the reaction chamber of the DC reactive magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 3×10 -3 Pa, with different components of cadmium-zinc alloy as the target, a cadmium-zinc-oxygen alloy film with a thickness of about 200nm was grown on a quartz plate by DC reactive magnetron sputtering. During sputtering, the substrate temperature was 600°C, The radiation power is 100w, the flow rate is 20sccm with argon and oxygen, and the working pressure is 15Pa.

[0022] The absorption spectrum of the prepared cadmium-zinc-oxygen alloy thin film was measured, and (αhv) was obtained after calculation and transformation 2 The relationship curve with photon energy...

Embodiment 3

[0024] Take the following process steps: 1) ball mill cadmium oxide and zinc oxide according to the atomic content ratio of 0:1, 1:9, 2:8, 3:7, 4:6, 5:5 and press them into different components cadmium zinc oxide ceramic target; 2) cleaning the double-sided polished sapphire sheet, putting it into the reaction chamber of the radio frequency magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa, using cadmium-zinc-oxygen ceramics with different components as the target material, a cadmium-zinc-oxygen alloy film with a thickness of about 500nm is grown on a sapphire wafer by sputtering. During sputtering, the substrate temperature is 750°C, the sputtering power is 120w, Argon gas (flow rate: 20sccm) is passed through, and the working pressure is 2Pa.

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Abstract

The invention discloses a cadmium zinc oxygen alloy film. A cadmium zinc oxygen film with different components is prepared on a substrate within a specific temperature zone with a magnetron sputteringmethod, the emission wavelength of the obtained cadmium zinc oxygen film with different components is adjustable within the whole visible light range, and the obtained cadmium zinc oxygen film is a single hexagonal film in c-axis oriented growth. The invention also discloses a preparing method of the cadmium zinc oxygen alloy film. The invention uses cheap equipment which is commonly-used film preparing equipment in semiconductor industry. The invention has mature and simple processing technology and favourable repetitiveness, and the obtained cadmium zinc oxygen alloy film has favourable quality; by adjusting the relative content of cadmium and zinc in the cadmium zinc oxygen alloy film, the emission wavelength of the film can be adjusted within the whole visible light range.

Description

technical field [0001] The invention relates to a cadmium-zinc-oxygen alloy thin film and a preparation method thereof, in particular to a cadmium-zinc-oxygen alloy thin film whose luminescence wavelength can be adjusted within the entire visible light range and a preparation method thereof. Background technique [0002] Zinc oxide is a direct bandgap compound semiconductor material, which has a relatively large bandgap width (3.37eV) and a large exciton binding energy (60meV) at room temperature, which ensures that zinc oxide can achieve high efficiency even at high temperatures. Stimulated radiation is very conducive to the manufacture of high quantum efficiency light-emitting devices that work at room temperature or even high temperature. In addition, ZnO also has the advantages of low epitaxy and crystal growth temperature, easy wet chemical etching, and low cost of thin film preparation, and is considered to be a very promising optoelectronic material. In the zinc oxid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 陈培良张瑞捷马向阳杨德仁
Owner ZHEJIANG UNIV
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