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Light-emitting diode and its preparation method

A technology for light-emitting diodes and a manufacturing method, which is applied in the fields of semiconductor/solid-state device manufacturing, organic semiconductor devices, electric solid-state devices, etc., can solve the problem that the electrical properties of light-emitting diode elements cannot meet application requirements, and the multi-color output combination of the same chip cannot be realized. The growth temperature of the type layer cannot be reached, so as to achieve the effect of improving the light extraction efficiency, lowering the growth temperature, and reducing the lattice difference.

Active Publication Date: 2018-02-27
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to avoid destroying the quantum well layer structure, the growth temperature of the P-type layer cannot reach the range of obtaining better crystal quality, and thus the P-type layer structure with better quality cannot be obtained, resulting in that the electrical properties of the light-emitting diode components cannot meet the application requirements.
In addition, due to the limitation of the structural characteristics of the LED, it is impossible to realize the multi-color output combination from the same chip, thus restricting the application range of the LED

Method used

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  • Light-emitting diode and its preparation method
  • Light-emitting diode and its preparation method

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Embodiment 1

[0032] See attached figure 1 , the light emitting diode structure includes a substrate 10, the substrate 10 is sapphire, silicon carbide, silicon, gallium nitride and other materials; an N-type semiconductor layer 20 is placed on the upper surface of the substrate 10, and the N-type semiconductor layer 20 is a single layer structure or a multilayer structure with different doping concentrations; the stress release layer 30 is placed on the upper surface of the N-type semiconductor layer 20, and the stress release layer 30 is an InGaX / GaX cycle structure; the transition layer 41 with a thickness of 10-100 Å The upper surface of the release layer 30 is grown, and the material of the transition layer 41 is Al x In y GaX, wherein 0≤x<1, 0<y<1, said X is a group V element. The nanoparticle layer 42 is placed on the upper surface of the transition layer 41, and forms the luminescent layer 40 with the transition layer 41. The nanoparticle layer 42 is one or more of spherical partic...

Embodiment 2

[0043] The difference between this embodiment and Embodiment 1 is that in this embodiment, after the growth of the stress release layer 30 is completed, the InGaX / GaX multi-quantum well layer 43 is first deposited by MOCVD, and then a transition layer is grown on the surface of the multi-quantum well layer 43. layer 41, the material of the transition layer 41 is Al x In y GaX material, wherein 0≤x<1, 0<y<1, and then using physical deposition to deposit the nanoparticle layer 42; the multi-quantum well layer 43, the transition layer 41 and the nanoparticle layer 42 together form the light-emitting layer 40; finally A P-type layer 50 composed of a hole injection layer 51 and a hole transport layer 52 is deposited to form a light emitting diode structure.

[0044] In the present embodiment, the In composition in the InGaX / GaX multi-quantum well layer 43, the In composition in the transition layer 41, and the particle diameter of the nanoparticle layer 42 are adjusted so that the...

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Abstract

Lighting diodes, including N -shaped layers, stress release layers, luminous layers, and P -shaped layers. They are characterized by: at least one nano particles with a quantum effect, which is the material of the nano particles as semiconductor.After the N -shaped layer and the P -shaped layer are injected current, the nano -particle layer of the semiconductor material is transmitted outward.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a light emitting diode and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diode (LED) devices, based on layers of crystalline semiconductor materials grown by methods such as metal-organic chemical vapor deposition (MOCVD), have been manufactured and used commercially since the early 1960s. The LED has the advantages of long life and low power consumption, but as the technology matures, the application fields of LEDs are becoming more and more diversified, and the requirements for the brightness of LEDs are also getting higher and higher. How to improve the power of LEDs is the key to the development of LEDs. one of the problems encountered. Some researchers increase the hole activation concentration by adjusting the light-emitting layer structure or the P-type layer structure and the growth conditions of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K2102/00H10K71/00
Inventor 林兓兓张家宏蔡吉明周瑜韦静静黄静
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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