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High-efficiency coupling structure among silicon-based optical waveguides and manufacturing method thereof

A silicon-based optical waveguide and coupling structure technology, applied in the direction of coupling of optical waveguides, can solve the problems of low reliability, large volume, and high power consumption, and achieve the effects of reducing process errors, improving process tolerance, and small additional loss

Active Publication Date: 2017-05-17
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current microwave photonic system is mainly composed of discrete optoelectronic devices, which have disadvantages such as large volume, high power consumption, serious influence from the external environment, and low reliability.

Method used

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  • High-efficiency coupling structure among silicon-based optical waveguides and manufacturing method thereof
  • High-efficiency coupling structure among silicon-based optical waveguides and manufacturing method thereof
  • High-efficiency coupling structure among silicon-based optical waveguides and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] The method of fabricating an efficient coupling structure between silicon-based optical waveguides includes the following steps:

[0035] 1) Coat the electron beam glue on the silicon material on the insulator. The electron beam glue adopts ZEP520A, the glue thickness is 350 nanometers, and the coupled waveguide pattern is directly written by electron beam lithography, and the electron beam glue mask is made by development. The cross-sectional view of the produced photoresist waveguide etching mask is as follows figure 2 Shown

[0036] 2) Using photoresist as an etching mask, use inductively coupled plasma to etch a trapezoidal silicon-based optical waveguide, such as image 3 Shown. The gas used for the etching of silicon is a mixture of sulfur hexafluoride and oxygen. The specific etching conditions are: sulfur hexafluoride flow rate is 5 sccm, oxygen flow rate is 3 sccm, air pressure is 0.5 pa, etching coil power is 90W, radio frequency The bias power is 5W, and the etc...

Embodiment 2

[0039] The method of fabricating an efficient coupling structure between silicon-based optical waveguides includes the following steps:

[0040] 1) Coat the electron beam glue on the silicon material on the insulator. The electron beam glue adopts ZEP520A, the glue thickness is 500 nanometers, and the coupled waveguide pattern is directly written by electron beam lithography, and the electron beam glue mask is made by development. The cross-sectional view of the produced photoresist waveguide etching mask is as follows figure 2 Shown

[0041] 2) Using photoresist as an etching mask, use inductively coupled plasma to etch a trapezoidal silicon-based optical waveguide, such as image 3 Shown. The gas used for the etching of silicon is a mixed gas of sulfur hexafluoride and oxygen. The specific etching conditions are: sulfur hexafluoride flow rate is 10 sccm, oxygen flow rate is 5 sccm, air pressure is 1.0 pa, etching coil power is 120W, radio frequency The bias power is 10W, and th...

Embodiment 3

[0044] The method of fabricating an efficient coupling structure between silicon-based optical waveguides includes the following steps:

[0045] 1) Coat the electron beam glue on the silicon material on the insulator. The electron beam glue adopts ZEP520A, the glue thickness is 400 nanometers, and the coupled waveguide pattern is directly written by electron beam lithography, and the electron beam glue mask is made by development. The cross-sectional view of the produced photoresist waveguide etching mask is as follows figure 2 Shown

[0046] 2) Using photoresist as an etching mask, use inductively coupled plasma to etch a trapezoidal silicon-based optical waveguide, such as image 3 Shown. The gas used for the etching of silicon is a mixture of sulfur hexafluoride and oxygen. The specific etching conditions are: sulfur hexafluoride flow rate is 8 sccm, oxygen flow rate is 4 sccm, air pressure is 0.75 pa, etching coil power is 90W, radio frequency The bias power is 8W, and the et...

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Abstract

The invention provides a high-efficiency coupling structure among silicon-based optical waveguides and a manufacturing method thereof. The structure comprises: (1) a standard silicon-based optical waveguide, which is 450-500 nanometers in width and serves as a waveguide of an optical device; (2) a tapered transition waveguide, which is 10-20 micrometers in length and serves as a transition waveguide among optical waveguides with different widths; and (3) a coupled zone fine waveguide, which is 380-420 nanometers in width and 10-15 micrometers in length and serves as an evanescent wave coupling waveguide. The manufacturing method includes the following steps: 1) using a photoresist to make a mask on a silicon-on-insulator; 2) making a trapezoid silicon-based optical waveguide through an inductively coupled plasma through etching; and 3) removing the photoresist mask and thus finishing manufacture of the high-efficiency coupling structure among silicon-based optical waveguides. The advantages are as follows: the trapezoid fine waveguide is adopted to serve as a coupling waveguide in a coupled zone, so the coupling efficiency among waveguides in a condition of the same coupling space is increased, a space among waveguides in a condition of the same coupling efficiency is increased, technical errors generated by proximity effects when electron beams etch the coupled zone are reduced, and technical tolerances are increased.

Description

Technical field [0001] The invention relates to an efficient coupling structure between silicon-based optical waveguides and a manufacturing method. The coupling structure is applied to silicon-based optical waveguide devices and belongs to the field of integrated microwave photonic devices. Background technique [0002] Photonic technology has outstanding advantages such as large bandwidth, low transmission loss, anti-electromagnetic interference, and tunability. In the past two decades, it has been extensively studied by domestic and foreign researchers and has achieved considerable development, including related materials and devices, photonic microwave Signal generation technology, photon signal processing technology, photon mixing technology, analog RF signal fiber link, photon beamforming, radio over optical system (RoF), analog-to-digital conversion and arbitrary waveform generation, etc. As a cross-technology field of photonic technology and radio frequency microwave tech...

Claims

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Application Information

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IPC IPC(8): G02B6/26
CPCG02B6/26
Inventor 顾晓文牛斌
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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