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A light-emitting diode epitaxial growth method and light-emitting diode

A technology of light-emitting diodes and epitaxial growth, which is applied in nanotechnology for materials and surface science, semiconductor devices, electrical components, etc., can solve problems such as reduced luminous efficiency, and achieve increased recombination probability, improved balance, and improved mobility. Effect

Active Publication Date: 2019-02-26
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the present invention provides a light-emitting diode epitaxial growth method and a light-emitting diode, which solves the technical problem that the luminous efficiency of the LED epitaxial structure decreases under high current in the prior art.

Method used

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  • A light-emitting diode epitaxial growth method and light-emitting diode
  • A light-emitting diode epitaxial growth method and light-emitting diode
  • A light-emitting diode epitaxial growth method and light-emitting diode

Examples

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Comparison scheme
Effect test

Embodiment 1

[0056] Such as figure 1 with figure 2 as shown, figure 1 It is a schematic flow chart of the LED structure epitaxial growth method in the prior art; figure 2 for figure 1 Schematic diagram of the structure of the LED prepared by the method. The LED structure epitaxial growth method in the prior art includes the following steps:

[0057] Step 101, processing the sapphire substrate:

[0058] Under the hydrogen atmosphere of 1000-1100°C, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100-300mbar (air pressure unit), and process the sapphire substrate for 5-10 minutes.

[0059] Step 102, growing a low-temperature buffer layer GaN:

[0060] Cool down to 500-600°C, keep the reaction chamber pressure at 300-600mbar, and feed NH with a flow rate of 10000-20000sccm (sccm remark standard ml per minute) 3 , 50-100sccm TMGa and 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20-40nm on a sapphire substrate.

[0061] St...

Embodiment 2

[0099] Such as Figure 5 As shown, it is a schematic flow chart of the light-emitting diode epitaxial growth method described in this embodiment, and the method includes the following steps:

[0100] Step 501, processing the sapphire substrate: in a hydrogen atmosphere at 1000-1100°C, inject 100L / min-130L / min of H 2 , keeping the pressure of the reaction chamber at 100-300 mbar, and processing the sapphire substrate for 5-10 minutes.

[0101] Step 502, growing low-temperature buffer layer GaN: at a temperature of 500-600°C, a reaction chamber pressure of 300-600mbar, and a flow rate of 10000-20000sccm of NH 3 , 50-100sccm TMGa and 100L / min-130L / min H 2 Under the condition of , a low temperature buffer layer GaN with a thickness of 20-40nm is grown on the sapphire substrate.

[0102] Step 503, low-temperature buffer layer GaN etching treatment: raise the temperature to 1000-1100°C, keep the reaction chamber pressure at 300-600mbar, and feed NH at a flow rate of 30000-40000sc...

Embodiment 3

[0117] This example provides a comparison example of the luminous performance of the light-emitting diode of the present invention and the light-emitting diode of the traditional solution. The comparative method of the present embodiment comprises the following contents:

[0118] Sample 1 was prepared according to the traditional LED growth method, and sample 2 was prepared according to the method described in the present invention; the difference between sample 1 and sample 2 epitaxial growth method parameters was that the preparation process of sample 2 grew a MgInN / ZnGaN superlattice layer, and the sample The growth conditions of other epitaxial layers of sample 1 and sample 2 are exactly the same (please refer to Table 1). Sample 1 and sample 2 were plated with an ITO layer with a thickness of about 150nm under the same pre-process conditions, and a Cr / Pt / Au electrode with a thickness of about 1500nm was plated under the same conditions, and the plated thickness was about ...

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Abstract

The invention discloses a light-emitting diode epitaxial growth method, comprising the following steps: treating a sapphire substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a MgInN / ZnGaN superlattice layer, growing an InxGa(1-x)N / GaN luminous layer, growing a P-type AlGaN layer, growing a magnesium-doped P-type GaN layer, and performing cooling to obtain a light-emitting diode (LED). According to the method disclosed by the invention, the luminous efficiency of the LED can be improved.

Description

technical field [0001] The present invention relates to the technical field of light-emitting diodes, and more specifically, to a light-emitting diode epitaxial growth method and a light-emitting diode. Background technique [0002] Light Emitting Diode (LED for short) is a solid-state lighting device. As a lighting source, compared with the existing traditional lighting sources, LED has the advantages of small size, low power consumption, energy saving, long service life, high brightness, and environmental protection. , sturdy and durable, rich colors and so on. At present, the scale of domestic production of LEDs is gradually expanding, and the demand for LEDs and LED light effects in the market is increasing day by day. At present, the scale of domestic production of LEDs is also gradually expanding. With the improvement of people's living standards, the demand for improving the brightness and light efficiency of LEDs is increasing day by day. Good LED, which puts forwa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/04B82Y30/00
CPCB82Y30/00H01L33/007H01L33/04H01L33/14
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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