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Method for overcoming PETEOS thin film defects and semiconductor structure

A thin-film defect and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of poor film layer quality and unsatisfactory surface quality of other dielectric films, so as to increase surface activity and reduce Surface hillock defect, effect of reducing hydrogen bond content

Inactive Publication Date: 2017-05-31
WUHAN XINXIN SEMICON MFG CO LTD
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  • Application Information

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Problems solved by technology

[0003] However, there are many hillock defects on the surface of the PETEOS film grown by the existing technology. The particle size and number of hillocks lead to the deterioration of the quality of other dielectric film layers grown on the PETEOS film surface, which leads to the unsatisfactory surface quality of other dielectric films. Requirements for Existing Double Exposure Technology Process Nodes

Method used

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  • Method for overcoming PETEOS thin film defects and semiconductor structure
  • Method for overcoming PETEOS thin film defects and semiconductor structure

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Embodiment 1

[0031] In step 2 of this embodiment, a mixed gas of oxygen and helium is introduced into the process chamber where the semiconductor substrate is located, the flow rate of oxygen is 4200 sccm, the flow rate of helium is 4000 sccm, the pressure in the process chamber is 5 torr, and the process The radio frequency power of the radio frequency source in the chamber is 790W, and the temperature in the process chamber is 400°C. After the plasma treatment for 5s, the plasma treatment step of step 2 is completed.

Embodiment 2

[0033] In step 2 of this embodiment, a mixed gas of oxygen and argon is introduced into the process chamber where the semiconductor substrate is located, the flow rate of oxygen is 1000 sccm, the flow rate of argon is 1000 sccm, the pressure in the process chamber is 3 torr, and the process The radio frequency power of the radio frequency source in the chamber is 1000W, the temperature in the process chamber is 500°C, and after plasma treatment for 8s, the plasma treatment step of step 2 is completed.

Embodiment 3

[0035] In step 2 of this embodiment, a mixed gas of oxygen and nitrogen is introduced into the process chamber where the semiconductor substrate is located. The flow rate of oxygen is 6000 sccm, the flow rate of nitrogen gas is 5000 sccm, and the pressure in the process chamber is 10 torr. The radio frequency power of the medium radio frequency source is 600W, and the temperature in the process chamber is 300°C. After plasma treatment for 2s, the plasma treatment step of step 2 is completed.

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Abstract

The invention particularly relates to a method for overcoming PETEOS thin film defects and a semiconductor structure. The method for overcoming the PETEOS thin film defects comprises the following steps of step 1, forming a PETEOS thin film on a semiconductor substrate in a deposition manner; and step 2, pumping a first reaction gas and a second reaction gas to a technological cavity where the semiconductor substrate is located, performing excitation on the mixed gas of the first reaction gas and the second reaction gas to form plasma, and performing plasma treatment on the upper surface of the PETEOS thin film by the plasma, wherein the first reaction gas is an oxidizing gas; and the second reaction gas is an inert gas or nitrogen. By adoption of the method, the surface activity of the thin film can be improved and the hydrogen bond content on the surface of the thin film can be effectively lowered, thereby overcoming the small-bump defects on the surface of the thin film, and satisfying the technological demand of the existing dual-exposure process.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for improving PETEOS film defects and a semiconductor structure. Background technique [0002] In recent years, using TEOS (orthoethyl silicate) and oxygen as raw materials, the technology of depositing PETEOS (plasma-enhanced tetraethyl orthosilicate) thin films by PECVD (plasma-enhanced chemical vapor deposition) has become more and more popular in the semiconductor integrated circuit process. be valued. One of the advantages of using TEOS and oxygen as raw materials to grow PETEOS films is that the step coverage is good, because the mobility of the TEOS surface is large, which can avoid the generation of low-density areas or voids. Another advantage of the PETEOS process is that the temperature of the deposited film is reduced due to plasma activation, so it is widely used in the metal layer interconnection of semiconductor devices. The ...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L27/11521H01L27/11568
CPCH01L21/02118H01L21/0234H01L21/02359H10B41/30H10B43/30
Inventor 高升曾庆锴刘聪张莉万先进
Owner WUHAN XINXIN SEMICON MFG CO LTD
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