Quantum dot structure and manufacturing method thereof, and quantum dot light emitting diode and manufacturing method thereof
A technology for quantum dot light-emitting and manufacturing methods, which is applied in the fields of light-emitting materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., and can solve problems such as unfavorable preparation of high-performance quantum dot light-emitting diodes, quantum dot collapse, lattice mismatch, etc. , to achieve the effect of ensuring monodispersity, eliminating compressive stress and excellent structural performance
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[0038] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0039] see figure 1 , is a schematic structural diagram of the quantum dot light-emitting diode provided by the present invention. The quantum dot light emitting diode 100 includes a substrate 1 , a hole injection layer 2 , a hole transport layer 3 , a quantum dot light emitting layer 4 , an electron transport layer 5 and a cathode 6 stacked in sequence.
[0040] The substrate 1 includes a substrate 11 and a conductive anode 12 deposited on the substrate 11 . The substrate 11 is a rigid substrate or a flexible substrate, wherein the rigid substrate is glass, silicon wafer or other rigid materials; the flexible substrate is a plastic substrate, aluminum foil, ultra-thin metal or ultra-thin glass. The conductive anode 12 is formed of ITO, graphene, indium gallium zinc oxide or other conductive materials, and is deposited on the surface of the substrate ...
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