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Controllable preparation method for tungsten disulfide

A technology of tungsten disulfide and silicon dioxide, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of uncontrollable growth and less tungsten disulfide, and achieve the reduction of operation steps, Simplified cleaning method, large area effect

Inactive Publication Date: 2017-06-09
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few studies on the preparation of tungsten disulfide by CVD. The size of the two-dimensional tungsten disulfide prepared in the existing reports is only tens to one hundred microns, which cannot achieve the purpose of controllable growth.

Method used

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  • Controllable preparation method for tungsten disulfide
  • Controllable preparation method for tungsten disulfide
  • Controllable preparation method for tungsten disulfide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Atmospheric pressure chemical vapor deposition method is adopted; a certain amount of 0.2gWO is weighed 3 and 1gS, and placed in two quartz boats; place the quartz boat with S at 25cm from the inlet of the tube furnace; place WO 3 In a quartz boat, the cleaned silicon dioxide / silicon substrate (1 cm×1 cm) was blown dry with a nitrogen gun, and then cleaned with an oxygen plasma cleaner for 3 min. Lay the silicon wafer substrate on a quartz boat and place it in the center of the heating zone. The tube furnace was ventilated with nitrogen for 60 minutes in advance, and the nitrogen flow rate was 200 sccm, and the air in the tube was exhausted. Adjust the nitrogen flow rate to 100 sccm, raise the temperature of the tube furnace to 950° C. at a heating rate of 30° C. / min, and keep the temperature for 15 minutes. When the tube furnace cooled down to room temperature naturally, the furnace cover was opened to obtain the required samples.

Embodiment 2

[0025] Atmospheric pressure chemical vapor deposition method is adopted; a certain amount of 0.2gWO is weighed 3 and 1gS, and placed in two quartz boats; place the quartz boat with S at 25cm from the inlet of the tube furnace; place WO 3 In a quartz boat, the cleaned silicon dioxide / silicon substrate (1 cm×1 cm) was blown dry with a nitrogen gun, and then cleaned with an oxygen plasma cleaner for 3 min. Lay the silicon wafer substrate on a quartz boat and place it in the center of the heating zone. The tube furnace was ventilated with nitrogen for 50 minutes in advance, and the nitrogen flow rate was 250 sccm, and the air in the tube was exhausted. Adjust the nitrogen flow rate to 150 sccm, raise the temperature of the tube furnace to 900° C. at a heating rate of 30° C. / min, and keep the temperature for 25 minutes. When the tube furnace cooled down to room temperature naturally, the furnace cover was opened to obtain the required samples.

Embodiment 3

[0027] Atmospheric pressure chemical vapor deposition method; weigh a certain 0.1gWO 3 and 1gS, and placed in two quartz boats; place the quartz boat with S at 25cm from the inlet of the tube furnace; place WO 3 In a quartz boat, the cleaned silicon dioxide / silicon substrate (1 cm×1 cm) was blown dry with a nitrogen gun, and then cleaned with an oxygen plasma cleaner for 3 min. Lay the silicon wafer substrate on a quartz boat and place it in the center of the heating zone. The tube furnace was ventilated with nitrogen for 60 minutes in advance, and the nitrogen flow rate was 200 sccm, and the air in the tube was exhausted. Adjust the nitrogen flow rate to 100 sccm, raise the temperature of the tube furnace to 850° C. at a heating rate of 30° C. / min, and keep the temperature for 20 minutes. When the tube furnace cooled down to room temperature naturally, the furnace cover was opened to obtain the required samples.

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Abstract

Two-dimensional tungsten disulfide is a novel graphene-like two-dimensional material and has the great application potential on the aspects of electrical devices, energy, biotechnology and composites. A preparation method for the two-dimensional tungsten disulfide comprises a mechanical stripping method, an electrochemical lithium ion intercalation method, a liquid phase stripping method, a hydrothermal method, a chemical vapor deposition method and the like. The chemical vapor deposition method has the advantages of the controllable size, the controllable layer number, high material crystallization quality and the like when used for preparation of the two-dimensional tungsten disulfide. The study on CVD method preparation of the tungsten disulfide is less, the size of prepared two-dimensional tungsten disulfide in existing reports is only dozens of micrometers to a hundred micrometers, and the purpose of the controllable growth cannot be achieved. According to the controllable preparation method, by means of the chemical vapor deposition method, the growth process is improved, the vacuum low-pressure condition is not needed any more in the growth process, the growth can be conducted under the normal pressure, the high-quality two-dimensional tungsten disulfide can be grown through a simple single-temperature-zone pipe type furnace, the experiment process is simpler, the experiment cost is lowered greatly, and the experiment preparation controllability is improved.

Description

technical field [0001] The invention relates to a preparation method of nanomaterials, in particular to a controllable preparation method of tungsten disulfide. Background technique [0002] Because of their excellent electrical, optical, and thermal properties, two-dimensional materials have aroused the research enthusiasm of countless scholars and have attracted extensive attention in the field of materials science. The properties of two-dimensional materials are closely related to factors such as the number of layers and defects, and the preparation of two-dimensional materials is the basis for studying their properties and applications. Therefore, the controllable preparation of large-scale and high-quality two-dimensional materials is the focus of research in this field. Two-dimensional tungsten disulfide is a new type of graphene-like two-dimensional material, which has great application potential in electrical devices, energy, biology and composite materials. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/02
CPCC23C16/0227C23C16/305Y02P70/50
Inventor 何大伟巩哲何家琪王永生
Owner BEIJING JIAOTONG UNIV
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