Infrared detector for preparing titanium oxide electrodes through ion implantation and preparation method of infrared detector

Abstract

The invention relates to an infrared detector for preparing titanium oxide electrodes through ion implantation. A titanium oxide thin film is arranged on a support layer and connecting metals, the titanium oxide thin film comprises a semiconductor titanium oxide thin film body in the bridge surface area and a conductor titanium oxide thin film in the bridge leg area, titanium oxide is used as a thermo-sensitive layer thin film, ion implantation is conducted on a part of the titanium oxide thin film, and the part of the titanium oxide thin film becomes the conductor titanium oxide thin film to place metal electrodes in the prior art; the technology is simple and the productivity is high. The invention further relates to the preparation method of the detector. The method comprises the steps that the titanium oxide thin film, a first protection layer and photoresist are prepared on the support layer in sequence; a first protection layer thin film which is not covered by the photoresist on the titanium oxide thin film is removed, the exposed titanium oxide thin film is subjected to ion implantation, and the titanium oxide thin film subjected to ion implantation is the conductor titanium oxide thin film; the photoresist is removed, a second protection layer is deposited, and structure releasing is conducted.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical system process manufacturing in semiconductor technology, and in particular relates to an infrared detector for preparing titanium oxide electrodes by ion implantation and a preparation method thereof. Background technique [0002] Uncooled infrared detection technology is a technology that senses the infrared radiation (IR) of external objects without a cooling system and converts it into an electrical signal that is processed and output on the display terminal. It can be widely used in many fields such as national defense, aerospace, medicine, production monitoring, etc. . Uncooled infrared focal plane detectors are able to work at room temperature, and have the advantages of light weight, small size, long life, low cost, low power, fast startup and good stability, etc., which meet the needs of civilian infrared systems and some military The urgent need for long-wave infrared detectors in...

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Problems solved by technology

[0004] Vanadium oxide is generally used as the heat-sensitive film now, but the compatibility between the vanadium oxide heat-sensitive film and the integrated circuit manufacturing process is not good. The factory is worried that the vanadium oxide material and the vanadium material will contaminate the equipment, so the equipment after the vanadium oxide process needs to be configured separately and isolated to prevent contamination of other products and process equipment

[0005] In addition, in the prior art, metal electrodes are generally deposited and electrically connected to the heat-sensitive layer film, and the temperature change felt by the heat-sensitive layer is transmitted to the readout circuit of the base. chemical treatment, the process is cumbersome, the production capacity is low, and wastes resources, and no matter whether the heat-sensitive film is deposited first, and then the electrode is deposited, or the electrode is deposited first, and then the heat-sensitive film is deposited, the two are not on the same plane, and there is one more plane. It has more impact on flatness. The more process steps, the more defects may be brought, which will affect the yield.

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