A metal interconnection structure and manufacturing method of a radio frequency power semiconductor device
A metal interconnection, radio frequency power technology, applied in the direction of semiconductor/solid state device manufacturing, semiconductor devices, semiconductor/solid state device components, etc., can solve the problems of high cost and increase production cost, reduce production cost, prevent surface oxidation, price low cost effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0030] Embodiment 1: Fabricate metal interconnection structures with interconnection metal layers Ti / Cu / W with thicknesses of 10 nm, 100 nm, and 30 nm in sequence on the device to be processed.
[0031] Step 1, on the device to be processed with the source, drain and gate electrodes prepared, a 200nm thick SiN dielectric layer is grown by plasma enhanced chemical vapor deposition (PECVD).
[0032] 1a) Clean the surface of the sample to be processed with the source, drain and gate electrodes:
[0033] First, put the sample into an acetone solution and ultrasonically clean it for 3mim with an ultrasonic intensity of 3.0;
[0034] Then, put the sample in a stripping solution at a temperature of 60°C and heat it in a water bath for 5 minutes;
[0035] Next, put the sample into acetone solution and ethanol solution for ultrasonic cleaning for 3 minutes, and the ultrasonic intensity is 3.0;
[0036] Finally, the samples were rinsed with ultrapure water and dried with nitrogen;
...
Embodiment 2
[0064] Embodiment 2, on the device to be processed, a metal interconnection structure with an interconnection metal layer Ti / Cu / W with thicknesses of 20 nm, 200 nm, and 10 nm in sequence is fabricated.
[0065] Step 1: On the device to be processed with the source, drain and gate electrodes prepared, a 250nm thick SiN dielectric layer is grown by using a plasma enhanced chemical vapor deposition PECVD process.
[0066] 1.1) Clean the surface of the sample to be processed with the source, drain and gate electrodes:
[0067] The concrete realization of this step is identical with the step 1a) among the embodiment one;
[0068] 1.2) On the sample that has finished surface cleaning, use the plasma enhanced chemical vapor deposition PECVD process to grow a SiN dielectric layer with a thickness of 250nm. The growth process conditions are: use NH 3 and SiH 4 As the reaction gas, the substrate temperature is 250°C, the reaction chamber pressure is 600mTorr, and the radio frequency p...
Embodiment 3
[0085] Embodiment 3, on the device to be processed, a metal interconnection structure with an interconnection metal layer Ti / Cu / W with thicknesses of 15 nm, 150 nm, and 20 nm in sequence is fabricated.
[0086] Step A, on the device to be processed with the source, drain and gate electrodes prepared, use the plasma enhanced chemical vapor deposition PECVD process to grow 300nm thick SiO 2 medium layer.
[0087] A1) Clean the surface of the sample to be processed with the source, drain and gate electrodes:
[0088] The concrete realization of this step is identical with the step 1a) among the embodiment one;
[0089] A2) On the sample that has finished cleaning the surface, use the plasma enhanced chemical vapor deposition PECVD process to grow SiO with a thickness of 300nm 2 Dielectric layer, the process conditions for its growth are: using NH 3 and SiH 4 As the reaction gas, the substrate temperature is 250°C, the reaction chamber pressure is 600mTorr, and the radio frequ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com