Gallium-nitride-based inverter chip and forming method therefor

Abstract

The invention discloses a gallium-nitride-based inverter chip and a forming method therefor, and the chip comprises a substrate; a gallium nitride channel layer located on the substrate; a barrier layer located on the gallium nitride channel layer; a P-type III-family metal nitride layer located on the surface of the barrier layer; a first electrode located on the surface of the P-type III-family metal nitride layer; a second electrode, a third electrode and a fourth electrode, which are all located on the surface of the barrier layer. The chip is good in transmission performance, and is strong in loading capability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based inverter chip and a forming method thereof. Background technique [0002] Gallium nitride (GaN), as a representative of the third-generation semiconductor materials, has the characteristics of large band gap, high electron drift speed, high thermal conductivity, high voltage resistance, thermal decomposition resistance, corrosion resistance and radiation resistance. [0003] Since the forbidden band width of AlGaN in the AlGaN / GaN heterostructure is larger than that of GaN, at the intersecting interface, a potential barrier is formed on the AlGaN side, and a quasi-triangular potential well is formed on the GaN side, so that the electrons at the interface are in the horizontal direction It can move freely, but is confined in the quasi-triangular potential well in the direction perpendicular to the interface, which is called two-dimensional electron g...

AI Technical Summary

Problems solved by technology

However, there are generally disadvantages such as complex circuits, low integration, low power, low operating frequency, low frequency band, poor transmission, and weak load capacity. It is necessary to form an inverter with higher performance.

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