Process for preparing high-C-axis-orientation ScAlN thin film

Abstract

The invention discloses a process for preparing a high-C-axis-orientation ScAlN thin film and a preparation manner for lowering the process difficulty. In the vacuum environment, N2 gas is ionized through radio frequency so that local plasmas can be generated on a substrate, and a nitride layer is formed on the substrate mentioned above through the plasmas; by means of a radio frequency magnetron sputtering manner, a Sc-doped AlN thin film is prepared and formed on the substrate with a desalination layer under the room temperature condition, and the relative molecule content of the doping amount of the element Sc in the ScAlN thin film ranges from 0% to 28.87%; and regulation and control are achieved according to requirements, the relative molecule content values of the doping amount of the element Sc in the prepared thin film include 0, 7.45%, 11.45%, 14.49%, 21.50% and 28.87%. By means of the process, orientation of the ScAlN thin film can be optimized, and meanwhile the preparation difficulty is lowered.

Description

technical field [0001] The invention relates to a preparation process for preparing a ScAlN film, that is, a process for preparing a ScAlN film with high C-axis orientation by radio frequency magnetron sputtering and its optimization. Background technique [0002] The magnetic field sensor developed by magnetoelectric composite materials has high sensitivity and small volume, adapts to the trend of miniaturized devices, and can be used in many fields such as geophysics, national defense and military, and biomedicine. A variety of sensor structures combined with magnetoelectric composite materials, surface acoustic wave technology or bulk acoustic wave technology proposed in recent years can enable the sensor to be applied to both DC and broadband AC magnetic field detection while achieving high sensitivity, which meets the application requirements. In order to obtain a magnetic field sensor with better performance. The piezoelectric film in this structure has become a resea...

AI Technical Summary

Problems solved by technology

However, most of the current processes for preparing ScAlN thin films use DC magnetron sputtering, which requires heating to a high temperature of more than 300 degrees Celsius during the preparation process. Usually, the preparation time is more than 1 hour, which has great restrictions on the substrate of the multilayer structure of the sensor device. , the preparation of piezoelectric films at high temperatures requires the substrate material to have good high temperature resistance, which greatly reduces the selection range of substrate materials. At the same time, high power and good vacuum space are required for the preparation of films. As the energy supply of the vacuum system and the sputtering source is required during the preparation of the film, the longer the preparation time of the film, the more energy it consumes, and it needs to consume huge energy in the industrial preparation process, which is not conducive to industrial production. Therefore, improving the preparation process is of great significance for the subsequent preparation of magnetic field sensors with multilayer structures.

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