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A kind of quantum dot photoresist and preparation method thereof

A quantum dot and photoresist technology, applied in the field of quantum dot photoresist and its preparation, can solve the problems of reduced stability and optical efficiency of quantum dot materials, loss of activity, and reduced energy level of cadmium selenide quantum dots, etc. Improve stability and optical efficiency, ensure activity, and facilitate the effect of application

Active Publication Date: 2019-12-13
HISENSE VISUAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] When the quantum dot material provided by the prior art is used to prepare a photoresist, since the photoresist contains a large amount of photoinitiator material, it is easily decomposed into free radicals and cations when it is irradiated by ultraviolet light, free radicals and The cation loses its activity after contacting the surface of the quantum dot material, which also makes the R group in the quantum dot material affected by the change of the chemical environment, which leads to a decrease in the energy level of the cadmium selenide quantum dot, which makes the stability and optical efficiency of the quantum dot material reduce

Method used

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  • A kind of quantum dot photoresist and preparation method thereof
  • A kind of quantum dot photoresist and preparation method thereof
  • A kind of quantum dot photoresist and preparation method thereof

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Embodiment 1

[0057] This embodiment provides a quantum dot material and a quantum dot photoresist including the quantum dot material.

[0058] Specifically, the quantum dot material includes:

[0059] a) Quantum dot core: cadmium selenide,

[0060] b) quantum dot shell wrapped around the quantum dot core: zinc sulfide, and

[0061] c) Surface ligands covering the surface of the quantum dot shell.

[0062] Among them, the general formula of the surface ligand is:

[0063] HS-(-CH 2 -) n -R

[0064] Wherein, n is 1, R is a double bond, that is, the surface ligand is allyl thiol.

[0065] The process of preparing quantum dot photoresist using the quantum dot material is as follows:

[0066] 0.5g allyl mercaptan is mixed with 91g negative photoresist (SU-8 series photoresist produced by U.S. Microlithography Chemical Company (MicrolithographyChemical) to obtain a mixed solution, then add 8.5g in the mixed solution Cadmium selenide quantum dots to obtain quantum dot photoresists.

[00...

Embodiment 2

[0072] This embodiment provides a quantum dot material and a quantum dot photoresist including the quantum dot material.

[0073] Specifically, the quantum dot material includes:

[0074] a) Quantum dot core: cadmium selenide,

[0075] b) quantum dot shell wrapped around the quantum dot core: zinc sulfide, and

[0076] c) Surface ligands covering the surface of the quantum dot shell.

[0077] Among them, the general formula of the surface ligand is:

[0078] HS-(-CH 2 -) n -R

[0079] Wherein, n is 1, R is furfuryl, that is, the surface ligand is furfuryl methyl mercaptan.

[0080] The process of preparing quantum dot photoresist using the quantum dot material is as follows:

[0081] Mix 2.2g of allyl mercaptan with 93.8g of negative photoresist (model: SU-8) to obtain a mixed solution, and then add 4g of cadmium selenide quantum dots to the mixed solution to obtain a quantum dot photoresist.

[0082] Wherein, the preparation process of cadmium selenide quantum dots is...

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Abstract

The invention discloses a quantum dot material, a quantum dot photoresist and a preparation method of the quantum dot photoresist and belongs to the field of quantum dot material modification. The quantum dot material comprises (a) a quantum dot core, (b) a quantum dot shell wrapping the outside of the quantum dot core, and (c) a surface ligand covering the surface of the quantum dot shell, wherein a general formula of the surface ligand is HS-(-CH2-)n-R, wherein n is an integer of 0-11 and R is groups containing unsaturated bonds. According to the quantum dot material, by adopting a sulfhydryl short-chain compound with unsaturated bond groups as the surface ligand, through polymerization reaction of the groups containing the unsaturated bonds and free radicals and cations decomposed from a photoinitiator material or polymerization reaction among the groups containing the unsaturated bonds between surface ligands, direct contact of the free radicals and cations and the quantum dot shell is avoided, the crosslinking degree of a polymer on the surface of the quantum dot shell is improved and a stable protective layer is formed on the surface of the quantum dot shell, so that the activity of the quantum dot material is ensured and the stability and the optical efficiency of the quantum dot material are improved.

Description

technical field [0001] The invention relates to the field of modification of quantum dot materials, in particular to a quantum dot photoresist and a preparation method thereof. Background technique [0002] As a new type of semiconductor nanomaterial, quantum dots are widely used in light-emitting diodes, solar cells, and biomarkers. However, since quantum dots are inorganic nanoparticles, their compatibility with most matrix materials is very poor, so a layer of organic ligands (ie, surface ligands) need to be coordinated on their surface during application. Surface ligands can not only stabilize quantum dots, but also improve the compatibility between quantum dots and matrix materials, and improve the optical properties of quantum dot materials. [0003] At present, the commonly used quantum dot materials are cadmium selenide quantum dots with core-shell structure, the quantum dot core is cadmium selenide quantum dots, and the quantum dot shell is ZnS. as attached Pictu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/88G03F7/004
CPCC09K11/025C09K11/883G03F7/004
Inventor 岳春波宋志成刘振国
Owner HISENSE VISUAL TECH CO LTD