Aluminum silicon carbide heat-sink base plate and manufacturing method thereof

An aluminum silicon carbide and heat sink technology, applied in heating inorganic powder coating and other directions, can solve problems such as difficulty in production process, and achieve the effects of excellent interlayer bonding force, good heat resistance and low thermal expansion coefficient

Active Publication Date: 2017-07-28
深圳市如器科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Since aluminum silicon carbide (AlSiC) is a conductive material, a thick-film insulating layer needs to be fabricated in advance when making printed circuits on the surface of aluminum silicon carbide (AlSiC). At present, this thick-film insulating layer is made of aluminum oxide (Al 2 o 3 ) ceramic sintered, due to alumina (Al 2 o 3 ) must be sintered at a high temperature, and the sintering temperature is as high as 800°C or above. Since pure aluminum cannot withstand temperatures above 660°C, it will cause difficulties and some problems in the production process

Method used

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  • Aluminum silicon carbide heat-sink base plate and manufacturing method thereof

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Experimental program
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Embodiment 1

[0031] Thick film insulating layer formula selection:

[0032] 1. Low temperature glass powder:

[0033] Choose lead-free glass powder with low temperature, low expansion coefficient and high hardness, including the following components by weight: Bi 2 o 3 40%-70%, ZnO 10%-30%, B 2 o 3 10%-30%, CaF 2 3%-5%, MoO 3 2%-8%, Al 2 o 3 1%-5%, SiO 2 0-10%, P 2 o 5 0-5%, Sb 2 o 3 0-5%, WO 3 0-5%, Na 2 O 0-5%; the particle size range is 125-400 mesh.

[0034] The preparation process of low-temperature glass powder is a mature process, generally: select raw materials according to the specified ratio for batching, mixing for more than 20 minutes, melting at a high temperature of 1100°C for more than 20 minutes to form a uniform, bubble-free melt, then cool and bake Dry for 8-15 hours, ball mill for 3 hours, sieve, and sieve all the ball-milled materials, and the sieved material is the finished product. Reference may also be made to the techniques disclosed in prior...

Embodiment 2

[0049] The process of this embodiment is basically the same as that of Example 1, and the changes of its formula ratio and process parameter control are shown in Table 1 and Table 2 for details.

[0050] Table 1 formula ratio

[0051] components Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Comparative example 3 low temperature glass powder 75 50 60 10 90 50 Varnish 25 50 40 90 10 50

[0052] Table 2 process parameters

[0053] Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Comparative example 3 Low temperature glass powder particle size / mesh 300 125 400 300 300 800 Boiling point of varnish solvent 180 220 200 180 200 80 Pre-baking temperature / ℃ 200 150 250 200 150 250 Pre-baking time / min 10 30 5 10 10 10 Sintering temperature / ℃ 500 400 550 500 500 500 Sintering time / min 10 30 5 10 10 10 ...

Embodiment 3

[0055] The process of this embodiment is basically the same as that of Example 1, and the adjustments of its formula ratio and process parameters are shown in Table 1 and Table 2 for details.

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Abstract

The invention discloses an aluminum silicon carbide heat-sink base plate and a manufacturing method thereof. The manufacturing method comprises the following steps of: preparing slurry by low-temperature glass powder and mixed printing ink; sintering the slurry on an aluminum silicon carbide substrate; and greatly reducing a sintering temperature of an insulating layer to 450-550 DEG C. The manufactured aluminum silicon carbide heat-sink base plate has good interlayer binding force and insulating performance and is low in thermal expansion coefficient; and a thick film insulating layer is good in heat resistance.

Description

technical field [0001] The invention relates to the technical field of packaging substrate materials, and particularly discloses an aluminum silicon carbide heat sink substrate and a preparation method thereof. Background technique [0002] Aluminum silicon carbide (AlSiC) is made by infiltrating molten aluminum into the three-dimensional network structure of foamed silicon carbide. It has a double network structure of SiC and Al. It fully combines the different advantages of silicon carbide ceramics and metal aluminum. High thermal conductivity, a coefficient of thermal expansion (CTE) that matches the chip (Si, GaAs), can withstand thousands of thermal cycles without failure, low density, light weight, high hardness and high flexural strength, compared with W-Cu is much cheaper and is the leader in the new generation of electronic packaging materials. It meets the requirements of lightweight and high-density packaging. It is the first choice for solving thermal management ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C24/08C03C8/24C03C12/00
Inventor 吴世清
Owner 深圳市如器科技有限公司
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