A nonvolatile resistive memory unit with multi-valued storage characteristics based on ferroelectric heterojunction and its preparation method
A multi-value storage and resistive storage technology, applied in electrical components, information storage, static memory, etc., can solve the problems of not providing enough electrons to the amplifier, the reliability of information storage cannot be guaranteed, and the signal-to-noise ratio cannot be obtained. To achieve the effect of simple structure, high density and low production cost
Inactive Publication Date: 2020-01-14
CHINA UNIV OF PETROLEUM (EAST CHINA)
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] Taking dynamic memory as an example, if the capacitance in the storage unit is too small, it will not be able to provide a sufficient number of electrons to the amplifier, and will not be able to obtain a sufficient signal-to-noise ratio, and the reliability of information storage cannot be guaranteed
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0026] Step 1: Cleaning of the ferroelectric single crystal substrate.
[0027] The ferroelectric single crystal substrate is made of 0.7Pb(Mg 1 / 3 Nb 2 / 3 )O 3 / 0.3PbTiO 3 Single crystal substrate polished on one side. Alternately use acetone, ethanol and deionized water for ultrasonic cleaning to make the surface of the ferroelectric single crystal substrate free from pollution.
[0028] Step 2: Fabrication of TiO with oxygen vacancies based on pulsed laser deposition on ferroelectric single crystal substrates 2 The thin film acts as a resistive layer.
[0029] Choose TiO 2 (purity>99.9%) ceramics as target material, 0.7Pb(Mg 1 / 3 Nb 2 / 3 )O 3 / 0.3PbTiO 3 It is a ferroelectric single crystal substrate, and the distance between the target and the ferroelectric single crystal substrate is 60 mm. The deposited oxygen partial pressure and temperature of the ferroelectric single crystal substrate were 0.1Pa and 700°C respectively, the frequency of the KrF pulsed laser was ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
A ferroelectric heterojunction-based nonvolatile resistive memory unit with multi-valued storage characteristics and a preparation method thereof belong to the technical field of semiconductor solid-state memory. It is composed of a writing bottom electrode, a ferroelectric single crystal substrate, a resistive layer and a top electrode; a writing bottom electrode is prepared on the lower surface of the ferroelectric single crystal substrate, and a resistive layer is prepared on the upper surface; There is a top electrode, the top electrode is composed of four strip electrodes, the two strip electrodes in the middle are read electrodes in a resistive state, and the two strip electrodes symmetrically distributed outside the read electrodes are write top electrodes. The external wires are connected; or the top electrode is composed of a ring electrode and two strip electrodes, the ring electrode is symmetrically distributed around the two strip electrodes, the ring electrode is the top electrode for writing, and the two strip electrodes are in the resistance state The read electrode; the write top electrode together with the write bottom electrode constitutes the write electrode in the resistive state. It has the characteristics of simple structure, strong stability, low production cost and can work at room temperature.
Description
technical field [0001] The invention belongs to the technical field of semiconductor solid-state memory, and in particular relates to a ferroelectric heterojunction-based nonvolatile resistive memory unit with multi-value storage characteristics and a preparation method thereof. Background technique [0002] Information storage device is one of the basic devices in the modern information industry, and it exists in most electronic products, including mobile phones, computers, cameras, automotive electronic systems, global positioning systems, etc. According to whether the data can be saved after power failure, the memory is mainly divided into two categories: non-volatile memory and volatile memory. Volatile memory cannot save data after power failure, while non-volatile memory can still save data after power failure. [0003] Traditional non-volatile storage is mainly based on magnetic storage and optical storage, while solid-state storage has no read-write head and does no...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/22
CPCG11C11/2273G11C11/2275H10N70/24H10N70/011
Inventor 尼浩王涛李代林
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)