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Polycrystalline silicon surface honeycomb structure and preparation method thereof

A polysilicon, honeycomb-shaped technology, applied in the field of technical solar cells, can solve problems such as deep defects and small structures, and achieve the effect of improving electrical properties, good reflectivity, and wide application in the market

Inactive Publication Date: 2017-08-18
江苏辉伦太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this original black silicon nano-light-trapping structure usually has a small, dense, deep structure and many defects. The current technology will optimize the original black silicon structure. Most of the optimization methods currently use alkali treatment. The silicon chip structure is mostly hole-like or inverted pyramid structure

Method used

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  • Polycrystalline silicon surface honeycomb structure and preparation method thereof
  • Polycrystalline silicon surface honeycomb structure and preparation method thereof
  • Polycrystalline silicon surface honeycomb structure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] A method for preparing a polycrystalline silicon surface honeycomb structure, comprising the following steps:

[0031] S1. Place the polysilicon wafer in solution A for cleaning to remove the mechanically damaged layer on the surface of the polysilicon wafer;

[0032] Said solution A comprises according to volume percent concentration: HF6%, HNO 3 33%, DI pure water 61%, including HF, HNO 3 Neither contains water;

[0033] S2. Prepare the cleaned polysilicon wafers as black silicon by using metal ion assisted etching method or femtosecond laser pulse method or reactive ion etching method to prepare black silicon wafers;

[0034] S3, soaking the prepared black silicon wafer to remove residual metal particles;

[0035] S4. Place the cleaned black silicon wafer in solution C for structural reconstruction, and then place the reconstituted black silicon wafer in solution D for treatment, so that a honeycomb structure can be prepared on the surface of the polycrystalline s...

Embodiment 2

[0047] A method for preparing a polycrystalline silicon surface honeycomb structure, comprising the following steps:

[0048] S1. Place the polysilicon wafer in solution A for cleaning to remove the mechanically damaged layer on the surface of the polysilicon wafer;

[0049] Said solution A comprises according to volume percent concentration: HF3%, HNO 3 15%, DI pure water 82%;

[0050] S2. Prepare the cleaned polysilicon wafers as black silicon by using metal ion assisted etching method or femtosecond laser pulse method or reactive ion etching method to prepare black silicon wafers;

[0051] S3, soaking the prepared black silicon wafer to remove residual metal particles;

[0052] S4. Place the cleaned black silicon wafer in solution C for structural reconstruction, and then place the reconstituted black silicon wafer in solution D for treatment, so that a honeycomb structure can be prepared on the surface of the polycrystalline silicon wafer ;

[0053] The solution C in t...

Embodiment 3

[0063] A method for preparing a polycrystalline silicon surface honeycomb structure, comprising the following steps:

[0064] S1. Place the polysilicon wafer in solution A for cleaning to remove the mechanically damaged layer on the surface of the polysilicon wafer;

[0065] Said solution A comprises: HF10%, HNO 3 38%, DI pure water 52%;

[0066] S2. Prepare the cleaned polysilicon wafers as black silicon by using metal ion assisted etching method or femtosecond laser pulse method or reactive ion etching method to prepare black silicon wafers;

[0067] S3, soaking the prepared black silicon wafer to remove residual metal particles;

[0068] S4. Place the cleaned black silicon wafer in solution C for structural reconstruction, and then place the reconstituted black silicon wafer in solution D for treatment, so that a honeycomb structure can be prepared on the surface of the polycrystalline silicon wafer ;

[0069] The solution C in the S4 includes: HF8%, HNO 3 20%, H 2 o ...

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Abstract

The invention discloses a polycrystalline silicon surface honeycomb structure and a preparation method thereof. The polycrystalline silicon surface honeycomb structure is characterized in that the surface of a polycrystalline silicon wafer is provided with a plurality of uniformly distributed honeycomb structures, each honeycomb structure is a polygonal opening, each surface along the polygonal opening extends obliquely towards the internal part of the polycrystalline silicon wafer, each surface along the polygonal opening is polygonal, and the opening, which is located at the surface of the polycrystalline silicon wafer, of each honeycomb structure is greater than the extending bottom surface inside the polycrystalline silicon wafer; and the diameter of the polygonal opening of each honeycomb structure is 100-1000 nanometers, and the vertical depth is 50-800 nanometers. The honeycomb structures in the invention are more excellent in light trapping effect, the number of reflection times of light in the honeycomb structures is greater, the structure with such a size can better ensure a characteristic of low reflectivity of black silicon, each surface in the structure can better cover a passivation film, and more excellent passivation effects are generated, so that the electric performance of polycrystalline solar cells is improved, and the conversion efficiency of the cells is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a polycrystalline silicon surface honeycomb structure and a preparation method thereof. Background technique [0002] Compared with traditional texturing, the surface structure of polysilicon is micron-scale worm-like structure, and the reflectivity is controlled at about 24%, which has great room for improvement; black silicon technology was discovered in the late 1990s, and Professor Eric Mazur of Harvard University et al. [Applied Physics Letters, 1998, 73(12): 1673~1675] used femtosecond laser technology to obtain black silicon that almost completely absorbs light in the near-ultraviolet to near-infrared band (0.25-2.5 μm). The "black silicon" prepared in the current photovoltaic technology has a good light trapping effect and can significantly reduce the reflectivity of the silicon wafer surface. It is considered to be a structure that can effectively improve the convers...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 蒲天吴兢杜欢王兰芳赵兴国
Owner 江苏辉伦太阳能科技有限公司
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